期刊
APL MATERIALS
卷 3, 期 2, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.4906880
关键词
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资金
- NUSNNI-NanoCore at the National University of Singapore, Singapore
- NRF-CRP Tailoring Oxide Electronics by Atomic Control [NRF2008NRFCRP002-024]
- NUS YIA
- NUS cross-faculty grant
- FRC
- BMBF
We demonstrate the growth of high quality single phase films of VO2(A, B, and M) on SrTiO3 substrate by controlling the vanadium arrival rate (laser frequency) and oxidation of the V atoms. A phase diagram has been developed (oxygen pressure versus laser frequency) for various phases of VO2 and their electronic properties are investigated. VO2(A) phase is insulating VO2(B) phase is semi-metallic, and VO2(M) phase exhibits a metal-insulator transition, corroborated by photoelectron spectroscopic studies. The ability to control the growth of various polymorphs opens up the possibility for novel (hetero) structures promising new device functionalities. (C) 2015 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution 3.0 Unported License.
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