UV-Vis optoelectronic properties of α-SnWO4: A comparative experimental and density functional theory based study

We report a combined experimental and theoretical study on the optoelectronic properties of alpha-SnWO4 for UV-Vis excitation. The experimentally measured values for thin films were systematically compared with high-accuracy density functional theory and density functional perturbation theory using the HSE06 functional. The alpha-SnWO4 material shows an indirect bandgap of 1.52 eV with high absorption coefficient in the visible-light range (>2 x 10(5) cm(-1)). The results show relatively high dielectric constant (>30) and weak diffusion properties (large effective masses) of excited carriers. (C) 2015 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution 3.0 Unported License.