N-ZnO Nanowires/p-Si Heterojunction with Amorphous Seed Layer Prepared by Atomic Layer Deposition

An n-ZnO nanowires/p-Si heterojunction with amorphous ZnO seed layer prepared by atomic layer deposition is fabricated and its characteristics are investigated. After deposition of ZnO seed layer, the ZnO nanowire arrays are grown by the hydrothermal method. The influence of seed layer annealing on the nanowires is studied by X-ray diffraction spectrum results of the seed layer and corresponding nanowire arrays. Current-voltage measurements are taken at different temperatures to analyze the electrical characteristics of the heterojunction. The device shows high on/off current ratio, good reverse breakdown characteristic and high carrier injection efficiency. (C) 2013 The Electrochemical Society.