Double-Position-Boundaries Free 3C-SiC Epitaxial Layers Grown on On-Axis 4H-SiC

Considerably long carrier lifetimes in high-quality 3C-SiC(111)

(2012) I. G. Ivanov et al.   APPLIED PHYSICS LETTERS

Cubic SiC formation on the C-face of 6H–SiC (0001) substrates

(2012) Remigijus Vasiliauskas et al.   JOURNAL OF CRYSTAL GROWTH

3C–SiC Heteroepitaxial Growth by Vapor–Liquid–Solid Mechanism on Patterned 4H–SiC Substrate Using Si–Ge Melt

(2011) J. Lorenzzi et al.   CRYSTAL GROWTH & DESIGN

Sublimation growth of thick freestanding 3C-SiC using CVD-templates on silicon as seeds

(2011) P. Hens et al.   MATERIALS LETTERS

High Growth Rate of 4H-SiC Epilayers on On-Axis Substrates with Different Chlorinated Precursors

(2010) Stefano Leone et al.   CRYSTAL GROWTH & DESIGN

Chloride-based CVD of 3C-SiC epitaxial layers on 6H(0001) SiC

(2010) Stefano Leone et al.   Physica Status Solidi-Rapid Research Letters

Vapor–Liquid–Solid Growth of 3C-SiC on α-SiC Substrates. 1. Growth Mechanism

(2008) Maher Soueidan et al.   CRYSTAL GROWTH & DESIGN

On-axis homoepitaxial growth on Si-face 4H–SiC substrates

(2008) J. Hassan et al.   JOURNAL OF CRYSTAL GROWTH

Characterization of stacking faults in thick 3C-SiC crystals using high-resolution diffuse X-ray scattering

(2007) A. Boulle et al.   JOURNAL OF CRYSTAL GROWTH