From Molecular Gallium and Indium Siloxide Precursors to Amorphous Semiconducting Transparent Oxide Layers for Applications in Thin-Film Field-Effect Transistors

标题
From Molecular Gallium and Indium Siloxide Precursors to Amorphous Semiconducting Transparent Oxide Layers for Applications in Thin-Film Field-Effect Transistors
作者
关键词
-
出版物
ChemPlusChem
Volume 77, Issue 8, Pages 663-674
出版商
Wiley
发表日期
2012-07-19
DOI
10.1002/cplu.201200086

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