Effects of Mg-doped AlN/AlGaN superlattices on properties of p-GaN contact layer and performance of deep ultraviolet light emitting diodes

Enhanced vertical and lateral hole transport in high aluminum-containing AlGaN for deep ultraviolet light emitters

(2013) B. Cheng et al.   APPLIED PHYSICS LETTERS

Improved injection efficiency in 290 nm light emitting diodes with Al(Ga)N electron blocking heterostructure

(2013) T. Kolbe et al.   APPLIED PHYSICS LETTERS

High quality AlN grown on double layer AlN buffers on SiC substrate for deep ultraviolet photodetectors

(2012) T. M. Al tahtamouni et al.   APPLIED PHYSICS LETTERS

Surfactant effects of gallium on quality of AlN epilayers grown via metal-organic chemical-vapour deposition on SiC substrates

(2012) T M Al tahtamouni et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

Growth and characterization of Mg-doped AlGaN–AlN short-period superlattices for deep-UV optoelectronic devices

(2010) A.A. Allerman et al.   JOURNAL OF CRYSTAL GROWTH

Effect of the AlGaN electron blocking layer thickness on the performance of AlGaN-based ultraviolet light-emitting diodes

(2009) K.B. Lee et al.   JOURNAL OF CRYSTAL GROWTH

Si-doped high Al-content AlGaN epilayers with improved quality and conductivity using indium as a surfactant

(2008) T. M. Al tahtamouni et al.   APPLIED PHYSICS LETTERS

Effect of Thickness of the p-AlGaN Electron Blocking Layer on the Improvement of ESD Characteristics in GaN-Based LEDs

(2008) Chung-Hsun Jang et al.   IEEE PHOTONICS TECHNOLOGY LETTERS