期刊
SCIENTIFIC REPORTS
卷 7, 期 -, 页码 -出版社
NATURE PUBLISHING GROUP
DOI: 10.1038/s41598-017-16845-w
关键词
-
资金
- Ministry of Science and Technology of Taiwan
- Taiwan Semiconductor Manufacturing Company
- Ministry of Science and Technology of Taiwan (R.O.C.)
- Taiwan Semiconductor Manufacturing Company (TSMC) [MOST 105-2628-E-002-007-MY3, MOST 106-2923-E-002-006-MY3, MOST 104-2622-8-002-003]
- Directorate For Engineering
- Emerging Frontiers & Multidisciplinary Activities [1433459] Funding Source: National Science Foundation
In this work, we demonstrate for the first time an ultra-low contact resistance few-layered black phosphorus (BP) transistor with metallic PGex contacts formed by rapid thermal annealing (RTA). The on-state current of the transistor can be significantly improved and the I-ON/I-OFF ratio increases by almost 2 order. The hole mobility is enhanced by 25 times to 227 cm(2)V(-1)s(-1). The contact resistance extracted by the transfer length method is 0.365 k Omega.mu m, which is the lowest value in black phosphorus transistors without degradation of ION/IOFF ratio. In addition, the I-V curve of the transistor with PGex contact is linear compared to that with Ti contact at 80 K, indicating that a metallic ohmic contact is successfully formed. Finally, X-ray photoelectron spectroscopy is used to characterize the PGex compound. A signal of P-Ge bond is first observed, further verifying the doping of Ge into BP and the formation of the PGex alloy.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据