Growth and Fabrication of High External Quantum Efficiency AlGaN-Based Deep Ultraviolet Light-Emitting Diode Grown on Pattern Si Substrate

Recent Progress in AlGaN-Based Deep-UV LEDs

(2015) HIDEKI HIRAYAMA et al.   Electronics and Communications in Japan

AlN Nanowall Structures Grown on Si (111) Substrate by Molecular Beam Epitaxy

(2015) Yosuke Tamura et al.   Nanoscale Research Letters

Light-extraction efficiency control in AlGaN-based deep-ultraviolet flip-chip light-emitting diodes: a comparison to InGaN-based visible flip-chip light-emitting diodes

(2015) Keon Hwa Lee et al.   OPTICS EXPRESS

AlN Nanowall Structures Grown on Si (111) Substrate by Molecular Beam Epitaxy

(2015) Yosuke Tamura et al.   Nanoscale Research Letters

Growth of GaN films on circle array patterned Si (111) substrates

(2014) Kung-Liang Lin et al.   JOURNAL OF CRYSTAL GROWTH

Growth of lattice-matched InAlN/GaN on Si (111) substrate for ultraviolet photodiode application

(2013) Binh Tinh Tran et al.   Electronic Materials Letters

Fabrication and characterization of n-In0.4Ga0.6N/p-Si solar cell

(2012) Binh-Tinh Tran et al.   SOLAR ENERGY MATERIALS AND SOLAR CELLS

Realization of 256–278 nm AlGaN-Based Deep-Ultraviolet Light-Emitting Diodes on Si Substrates Using Epitaxial Lateral Overgrowth AlN Templates

(2011) Takuya Mino et al.   Applied Physics Express

Optical polarization characteristics of ultraviolet (In)(Al)GaN multiple quantum well light emitting diodes

(2010) Tim Kolbe et al.   APPLIED PHYSICS LETTERS

Development of 230-270 nm AlGaN-based deep-UV LEDs

(2010) Hideki Hirayama et al.   Electronics and Communications in Japan

222-282 nm AlGaN and InAlGaN-based deep-UV LEDs fabricated on high-quality AlN on sapphire

(2009) Hideki Hirayama et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Ultraviolet light-emitting diodes based on group three nitrides

(2008) Asif Khan et al.   Nature Photonics