Article
Chemistry, Multidisciplinary
Masatoshi Ito, Tomoko Fujino, Lei Zhang, So Yokomori, Toshiki Higashino, Rie Makiura, Kanokwan Jumtee Takeno, Taisuke Ozaki, Hatsumi Mori
Summary: Researchers synthesized planar alkoxy-substituted nickel bis(dithiolene) analogs with good solubility and crystallinity, which exhibited excellent ambipolar semiconductor performance in air. By addressing the molecular structure issue, they achieved high carrier mobility and large on/off ratio.
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY
(2023)
Article
Materials Science, Multidisciplinary
Xingyi Tan, Qiang Li, Dahua Ren
Summary: The simulation of gate-all-around SbSI nanowire FETs using the ab initio quantum transport technique shows that these transistors can meet the high-performance and low-dissipation requirements set by the International Technology Roadmap for Semiconductors of 2013. With a suitable underlap and gate-length, these FETs may offer a viable option for scaling Moore's law to 1 nm.
JOURNAL OF MATERIALS CHEMISTRY C
(2023)
Article
Chemistry, Multidisciplinary
Bo Wang, Liming Wang, Yichi Zhang, Maolong Yang, Dongdong Lin, Ningning Zhang, Zuimin Jiang, Maliang Liu, Zhangming Zhu, Huiyong Hu
Summary: This paper presents a 2D MoS2/3D Ge junction field-effect transistor with low subthreshold swing and high on/off ratio. The device exhibits bidirectional photoresponse and three controllable current states can be realized by changing the gate voltage and infrared light.
ADVANCED FUNCTIONAL MATERIALS
(2022)
Article
Nanoscience & Nanotechnology
Taekham Kim, Doohyeok Lim, Jaemin Son, Kyoungah Cho, Sangsig Kim
Summary: This study demonstrates reconfigurable n- and p-channel operations in a tri-top-gate field-effect transistor made of a p(+)-i-n(+) silicon nanowire. The device features simple design and high performance, allowing control of both operation modes on the same device.
Article
Multidisciplinary Sciences
Xuanzhang Li, Yang Wei, Zhijie Wang, Ya Kong, Yipeng Su, Gaotian Lu, Zhen Mei, Yi Su, Guangqi Zhang, Jianhua Xiao, Liang Liang, Jia Li, Qunqing Li, Jin Zhang, Shoushan Fan, Yuegang Zhang
Summary: A 1D semimetal-2D semiconductor contact using single-walled carbon nanotube electrodes is able to achieve contact lengths in the sub-2 nm region, with smaller van der Waals gaps and tunable Schottky barrier heights via gate potential for Ohmic contact. The study presents a basis for further miniaturization of nanoelectronics.
NATURE COMMUNICATIONS
(2023)
Review
Chemistry, Analytical
Huiping Li, Dujuan Li, Huiyi Chen, Xiaojie Yue, Kai Fan, Linxi Dong, Gaofeng Wang
Summary: As a new type of one-dimensional semiconductor nanometer material, silicon nanowires (SiNWs) have promising applications in the field of biomedical sensing. SiNWs possess excellent electronic properties that can enhance the detection sensitivity of biosensors. SiNWs combined with field effect transistors (FETs) form a special biosensor with high sensitivity and target selectivity in real-time and label-free. SiNW-FETs have gained more attention in biomedical detection. This review critically examines the progress of SiNW-FETs, focusing on reversible surface modification methods. Additionally, it summarizes the applications of SiNW-FETs in DNA, protein, and microbial detection, while discussing their working principle and technical approaches. The review provides extensive discussion for studying the challenges in the future development of SiNW-FETs.
Article
Nanoscience & Nanotechnology
Felix Winterer, Lisa Sophie Walter, Jakob Lenz, Stefan Seebauer, Yu Tong, Lakshminarayana Polavarapu, Ralf Thomas Weitz
Summary: This study investigates the charge transport properties in cesium lead bromide nanowire films, revealing that despite the presence of deep traps, the field-effect mobility increases significantly when the sample is illuminated, showing phonon-limited transport characteristics. The findings suggest that managing deep traps could lead to optimizing optoelectronic devices such as solar cells even at low light intensities.
ADVANCED ELECTRONIC MATERIALS
(2021)
Article
Engineering, Electrical & Electronic
Jinshui Miao, Chloe Leblanc, Jinjin Wang, Yue Gu, Xiwen Liu, Baokun Song, Huairuo Zhang, Sergiy Krylyuk, Weida Hu, Albert Davydov, Tyson Back, Nicholas Glavin, Deep Jariwala
Summary: Low power consumption is an important requirement in the development of modern electronics. Tunnel field-effect transistors based on two-dimensional materials offer improved electrostatic control and potentially higher on-current densities and on/off ratios.
NATURE ELECTRONICS
(2022)
Article
Materials Science, Multidisciplinary
Cecile Delacour, Farida Veliev, Thierry Crozes, Guillaume Bres, Julien Minet, Irina Ionica, Thomas Ernst, Anne Briancon-Marjollet, Mireille Albrieux, Catherine Villard
Summary: SiNW-FETs offer a local probe for sensing neuronal activity at the subcellular scale and can be combined with micropatterning or microfluidic techniques to build model neuron networks. This versatile device has potential applications in various research areas including diagnosis, prosthesis, and health security.
ADVANCED ENGINEERING MATERIALS
(2021)
Article
Materials Science, Multidisciplinary
Lester U. Vinzons, Akhilesh Kumar Gupta, Tung-Yen Lai, Shu-Ping Lin
Summary: Cell-coupled silicon nanowire field-effect transistor devices were used to study the impedance spectra of cells. Live observation of cells on the actual chips before impedance measurement revealed significant changes in the lower frequency range. Impedance spectra showed distinct variations after cells covered the surface of SiNW.
Article
Nanoscience & Nanotechnology
Young-Soo Park, Doohyeok Lim, Jaemin Son, Juhee Jeon, Kyoungah Cho, Sangsig Kim
Summary: This paper proposes inverting logic-in-memory cells with silicon nanowire feedback field-effect transistors, demonstrating steep switching and holding characteristics. The cells exhibit nanosecond operating speed, ultra-high voltage gain, and longer retention time compared to conventional DRAM. The disturbance characteristics of half-selected cells within the inverting LIM array confirm the proper functioning of the random access memory array.
Article
Chemistry, Physical
Anil Reddy Pininti, James M. Ball, Munirah D. Albaqami, Annamaria Petrozza, Mario Caironi
Summary: The study investigates the time-dependent electrical characteristics of field-effect transistors based on methylammonium lead iodide semiconductor and observes significant variations in output current, indicating hindered charge carrier mobility due to ion accumulation at grain boundaries. This research reveals the dynamic nature of field effect in solution-processed metal-halide perovskites and provides a methodology for characterizing charge carrier transport in emerging semiconductors.
ACS APPLIED ENERGY MATERIALS
(2021)
Article
Nanoscience & Nanotechnology
Yanan Guo, Dong Liu, Chengcheng Miao, Jiamin Sun, Zhiyong Pang, Peng Wang, Mingsheng Xu, Ning Han, Zai-Xing Yang
Summary: In this study, a ternary alloy of In0.2Ga0.8As nanowires was successfully prepared to balance the weak n-type characteristics in GaAs NWFETs and the poor p-type characteristics in InAs NWFETs. The resulting nanowires showed potential for application in near-infrared photodetection, with careful design of the surface oxide layer and body defects making them suitable for use in next-generation optoelectronic devices.
Article
Chemistry, Multidisciplinary
Jian Zhang, Gabriela Borin Barin, Roman Furrer, Cheng-Zhuo Du, Xiao-Ye Wang, Klaus Muellen, Pascal Ruffieux, Roman Fasel, Michel Calame, Mickael L. Perrin
Summary: Bottom-up synthesized graphene nanoribbons (GNRs) are of interest due to their atomically controlled structure and customizable physical properties. However, understanding the relationship between cryogenic charge transport and the number of GNRs in a device is challenging due to lack of precise control over GNR length and location.
Article
Engineering, Electrical & Electronic
Muhammad Awais, Habeeb Mousa, Kasif Teker
Summary: This study investigates the effect of pH on transport properties of silicon carbide nanowire field-effect transistor (SiCNW-FET) and finds that the device exhibits different behaviors under different pH solutions.
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
(2021)
Article
Chemistry, Multidisciplinary
Shen Zhou, Jiayue Yuan, Zi-Yu Wang, Kun Ling, Peng-Xiang Fu, Yu-Hui Fang, Ye-Xin Wang, Zheng Liu, Kyriakos Porfyrakis, G. Andrew D. Briggs, Song Gao, Shang-Da Jiang
Summary: The addressability of individual electron spin levels in endohedral nitrogen fullerenes has been achieved using molecular engineering and liquid-crystal-assisted methods. This allows for the coherent manipulation of electron spin levels and the implementation of quantum geometric phase manipulation.
ANGEWANDTE CHEMIE-INTERNATIONAL EDITION
(2022)
Article
Optics
Kevin Gallacher, Paul F. Griffin, Erling Riis, Marc Sorel, Douglas J. Paul
Summary: This study demonstrates a silicon nitride waveguide polarization rotator and polarization beam splitter with a polarization extinction ratio (PER) of approximately 30 dB at the rubidium atomic transition of 780 nm wavelength. These polarization devices are fabricated on the same chip using a self-aligned process. The polarization rotator achieves a high PER and low insertion loss (IL) over a wide bandwidth range (730-830 nm wavelengths) based on the mode evolution approach, while the polarization beam splitter separates different modes using a cascaded tapered asymmetric directional coupler.
Article
Optics
I. A. Fischer, M. Brehm, M. De Seta, G. Isella, D. J. Paul, M. Virgilio, G. Capellini
Summary: The integration of Ge on Si for photonics applications has reached a high level of maturity, with Ge photodetectors and Si/Ge heterostructure multiple quantum-well photodiodes being widely used. The development of high-quality material growth and integration has led to a broad field of photonic device research based on Si/Ge heterostructures, enabling applications ranging from quantum cascade lasers to sensors.
Review
Instruments & Instrumentation
J. P. McGilligan, K. Gallacher, P. F. Griffin, D. J. Paul, A. S. Arnold, E. Riis
Summary: Laser cooled atoms have played a significant role in precision metrology and have the potential to greatly enhance our modern technological capabilities. The transition from the laboratory to portable, compact quantum sensors is necessary to fully explore their potential. This requires the integration of various components and expertise for the realization of chip-scale cold atom sensors.
REVIEW OF SCIENTIFIC INSTRUMENTS
(2022)
Article
Physics, Multidisciplinary
Xinya Bian, Zhixin Chen, Jakub K. Sowa, Charalambos Evangeli, Bart Limburg, Jacob L. Swett, Jonathan Baugh, G. Andrew D. Briggs, Harry L. Anderson, Jan A. Mol, James O. Thomas
Summary: The outcome of electron-transfer processes is determined by the quantum-mechanical interplay between electronic and vibrational degrees of freedom. This study investigates electron transport through a porphyrin dimer molecule weakly coupled to graphene electrodes, revealing sequential tunneling initiated by current-induced phonon absorption and proceeding through rapid sequential transport via a nonequilibrium vibrational distribution.
PHYSICAL REVIEW LETTERS
(2022)
Article
Instruments & Instrumentation
Vinod Belwanshi, Abhinav Prasad, Karl Toland, Richard Middlemiss, Douglas Paul, Giles Hammond
Summary: This paper describes a technique for measuring the temperature sensitivity of a microelectromechanical system (MEMS) gravimeter and presents the experimental measurements and analytical calculations. The results show that the temperature sensitivity of the gravimeter depends on the material properties used. These findings are significant for the development of temperature insensitive MEMS gravimeters.
REVIEW OF SCIENTIFIC INSTRUMENTS
(2022)
Article
Physics, Applied
H. Tetzner, W. Seifert, O. Skibitzki, Y. Yamamoto, M. Lisker, M. M. Mirza, I. A. Fischer, D. J. Paul, Monica De Seta, G. Capellini
Summary: This study investigates the effective background charge density in intrinsic Si0.06Ge0.94/Ge plastically relaxed heterostructures deposited on Si(001). Results show p-type conductivity in the nominally intrinsic layer, with hole concentration in mid 10(15) cm(-3) range at temperatures between 50 and 200 K. Carrier freeze out below 50 K indicates carriers originate from ionization of shallow acceptor-like defect states above valence band. Additionally, one dominant hole trap located at mid-gap position is found.
APPLIED PHYSICS LETTERS
(2023)
Article
Physics, Applied
S. Dyer, K. Gallacher, U. Hawley, A. Bregazzi, P. F. Griffin, A. S. Arnold, D. J. Paul, E. Riis, J. P. McGilligan
Summary: We present a chip-scale wavelength reference that can be tuned to simplify and reduce the size of cold-atom sensors. By Zeeman-shifting the atomic transition through magnetic fields generated by printed-circuit-board coils, a 1-mm optical path length microfabricated cell is used as an atomic wavelength reference with dynamic frequency control. The laser frequency stabilization system's dynamic range is evaluated and used in conjunction with an improved generation of chip-scale cold-atom platforms that trap 4 million 87Rb atoms. The scalability and component consolidation are essential for the miniaturization of cold-atom sensors.
PHYSICAL REVIEW APPLIED
(2023)
Article
Energy & Fuels
Frederic Rendell-Bhatti, Ming Zeng, Pol Lloveras, Josep-Lluis Tamarit, Maria Barrio, Eamonn T. Connolly, Donald A. MacLaren, Freya Johnson, Lesley F. Cohen, David Boldrin
Summary: The magnetically frustrated manganese nitride antiperovskite family shows significant entropy changes under changes in hydrostatic pressure near a first-order antiferromagnetic to paramagnetic phase transition, which can be utilized in solid-state barocaloric cooling. Previous studies have shown that the transition hysteresis significantly reduces the reversible barocaloric effects. In this study, we demonstrate that the transition hysteresis can be tailored through quaternary alloying in the Mn3Cu1-xSnxN system.
JOURNAL OF PHYSICS-ENERGY
(2023)
Article
Engineering, Electrical & Electronic
Xin Yi, Zoe Greener, Fiona Fleming, Jaroslaw Kirdoda, Derek C. S. Dumas, Lisa Saalbach, Dave A. S. Muir, Lourdes Ferre-Llin, Ross W. Millar, Douglas J. Paul, Gerald S. Buller
Summary: In this study, afterpulsing in 26 and 100 µm diameter Ge-on-Si single-photon avalanche diode (SPAD) detectors was investigated using the double detector gating method. The results showed that Ge-on-Si SPADs exhibited a 1% afterpulsing probability at a delay time of 200 µs and temperature of 78 K, and 130 µs at a temperature of 150 K. These delay times were measured with an excess bias of 3.5% applied, which corresponded to a single-photon detection efficiency of 15% at 1.31 µm. We demonstrated that reducing the detector diameter can effectively restrict afterpulsing in this material system.
IEEE PHOTONICS TECHNOLOGY LETTERS
(2023)
Article
Chemistry, Multidisciplinary
Zhixin Chen, Jie-Ren Deng, Songjun Hou, Xinya Bian, Jacob L. Swett, Qingqing Wu, Jonathan Baugh, Lapo Bogani, G. Andrew D. Briggs, Jan A. Mol, Colin J. Lambert, Harry L. Anderson, James O. Thomas
Summary: Since the early days of quantum mechanics, it has been known that electrons have wave-particle duality. In this study, we demonstrate that electron transmission remains phase-coherent in molecular porphyrin nanoribbons connected to graphene electrodes. This opens up new avenues for studying quantum coherence in molecular electronic and spintronic devices.
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY
(2023)
Review
Optics
Robert h. Hadfield, Jonathan Leach, Fiona Fleming, Douglas j. Paul, Chee hing Tan, Jo shien Ng, Robert k. Henderson, Gerald s. Buller
Summary: The development of single-photon detectors with picosecond timing resolution has driven progress in time-correlated single-photon counting applications, including quantum optics, life sciences, and remote sensing. Advanced optoelectronic device architectures offer high-performance single-pixel devices and the ability to scale up to detector arrays, increasing single-photon sensitivity.
Proceedings Paper
Computer Science, Interdisciplinary Applications
Kyle A. Simpson, Chris Williamson, Douglas J. Paul, Dimitrios P. Pezaros
Summary: IoT and sensor networks play a critical role in public infrastructure, but they are notorious for their insecurities due to new exploits. Retrofitting security functions with software dataplanes can address this issue in datacentres, but it is not suitable for vulnerable low-power IoT gateways. Single-board computers (SBCs) are cheaper and more fitting for IoT gateways, but there are no service function chaining (SFC) approaches tailored to these devices. GALETTE is designed as a device-portable SFC framework for inexpensive defense of IoT networks by SBCs, using Linux's XDP tooling to provide a CPU-efficient, low latency dataplane.
2023 IFIP NETWORKING CONFERENCE, IFIP NETWORKING
(2023)
Article
Physics, Multidisciplinary
Florian Vigneau, Juliette Monsel, Jorge Tabanera, Kushagra Aggarwal, Lea Bresque, Federico Fedele, Federico Cerisola, G. A. D. Briggs, Janet Anders, Juan M. R. Parrondo, Alexia Auffeves, Natalia Ares
Summary: The ultrastrong coupling between single-electron tunneling and nanomechanical motion provides exciting opportunities for exploring fundamental questions and developing new platforms for quantum technologies. We have measured and modeled this electromechanical coupling in a fully suspended carbon nanotube device and found a ratio of gm/omega m = 2.72 +/- 0.14, which is the highest among all other electromechanical platforms and well within the ultrastrong coupling regime.
PHYSICAL REVIEW RESEARCH
(2022)
Article
Multidisciplinary Sciences
Charalambos Evangeli, Sumit Tewari, Jonathan Marcell Kruip, Xinya Bian, Jacob L. Swett, John Cully, James Thomas, G. Andrew D. Briggs, Jan A. Mol
Summary: Controlled electrobreakdown of graphene is important for various applications, and statistical analysis of the process provides insights into its behavior and characteristics under different conditions.
PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA
(2022)