Effect of the KF post-deposition treatment on grain boundary properties in Cu(In, Ga)Se2 thin films

Significant power conversion efficiency improvements have recently been achieved for thin-film solar cells based on a variety of polycrystalline absorbers, including perovskites, CdTe, and Cu(In, Ga) Se-2 (CIGS). The passivation of grain boundaries (GBs) through (post-deposition) treatments is a crucial step for this success. For the case of CIGS, the introduction of a potassium fluoride post-deposition treatment (KF-PDT) has boosted their power conversion efficiency to the best performance of all polycrystalline solar cells. Direct and indirect effects of potassium at the interface and interface-near region in the CIGS layer are thought to be responsible for this improvement. Here, we show that also the electronic properties of the GBs are beneficially modified by the KF-PDT. We used Kelvin probe force microscopy to study the effect of the KF-PDT on the CIGS surface by spatially resolved imaging of the surface potential. We find a clear difference for the GB electronic properties: the KF-PDT increases the band bending at GBs by about 70% and results in a narrower distribution of work function values at the GBs. This effect of the KF-PDT on the GB electronic properties is expected to contribute to the improved efficiency values observed for CIGS thin-film solar cells with KF-PDT.