Article
Optics
Srinivasa R. Tamalampudi, Ghada Dushaq, Juan E. Villegas, Nitul S. Rajput, Bruna Paredes, Elangovan Elamurugu, Mahmoud S. Rasras
Summary: Recent theoretical studies suggest that 2D GaGeTe crystals have high detection sensitivity at infrared wavelengths and can operate ultra-fast. Experimental studies on GaGeTe in the infrared region are limited, but early findings show potential for highly sensitive and ultrafast photodetection applications using multilayer GaGeTe-based photodetectors.
Article
Physics, Applied
Takuya Kadowaki, Tadashi Kawazoe, Masaki Sugeta, Masahiko Sano, Takashi Mukai
Summary: The Si infrared photodetector fabricated can operate without the need for cooling and exhibits high sensitivity to changes in carrier density due to stimulated emission, especially for wavelengths greater than the cutoff wavelength.
APPLIED PHYSICS EXPRESS
(2022)
Article
Chemistry, Multidisciplinary
Yiye Yu, Meng Peng, Fang Zhong, Zhen Wang, Xun Ge, Hao Chen, Jiaxiang Guo, Yang Wang, Yue Chen, Tengfei Xu, Tiange Zhao, Ting He, Kun Zhang, Feng Wu, Changqing Chen, Jiangnan Dai, Weida Hu
Summary: This research reports a two-dimensional (2D) material-based infrared photodetector with enhanced and broadened response by utilizing the synergistic effects of extrinsic photoconduction and photogating effect. The photodetector can detect infrared light up to 2 µm by extrinsic photoconduction and exhibits a responsivity of 100 mA W-1 under 1550 nm illumination. Furthermore, the ZrS3 infrared photodetectors with an oxide layer show a triple enhanced responsivity due to the photogating effect. This work provides a potential way to extend the response range and improve the responsivity for nanomaterial-based photodetectors at the same time.
MATERIALS HORIZONS
(2023)
Article
Chemistry, Multidisciplinary
Yang Liu, Yiyuan Gao, Qian Yang, Gao Xu, Xingyu Zhou, Guozheng Shi, Xingyi Lyu, Hao Wu, Jun Liu, Shiwen Fang, Muhammad Irfan Ullah, Leliang Song, Kunyuan Lu, Muhan Cao, Qiao Zhang, Tao Li, Jianlong Xu, Suidong Wang, Zeke Liu, Wanli Ma
Summary: We achieved a low-cost and scalable synthesis of SWIR PbS quantum dot inks for the first time through an extensive investigation of reaction kinetics. The solar cell based on these PbS SWIR quantum dot inks exhibited a record-high power conversion efficiency of 1.44% with an 1100 nm cutoff silicon filter, and the photodetector device showed a low dark current density of 2x10(-6) A cm(-2) at -0.8 V reverse bias and a high external quantum efficiency of 70% at approximately 1300 nm. Our results realize the direct synthesis of low-cost and scalable SWIR quantum dot inks and may accelerate the industrialization of consumer SWIR technologies.
ANGEWANDTE CHEMIE-INTERNATIONAL EDITION
(2023)
Article
Engineering, Electrical & Electronic
Lai-Hung Lai, Chin-Chuan Hsieh, Jhao-Lin Wu, Yi-Ming Chang
Summary: This study demonstrates a high-efficiency near-infrared sensor utilizing TiN and W as bottom electrodes, achieving high external quantum efficiency, low dark leakage current density, wide bandwidth, and broad dynamic range. The low resistivity and inert properties of TiN make it an ideal bottom-contact metal for organic photodiodes integrated on a Si substrate.
ACS APPLIED ELECTRONIC MATERIALS
(2022)
Article
Chemistry, Multidisciplinary
Yu Lu, Yue Wang, Chenhao Xu, Chao Xie, Wenbin Li, Jie Ding, Wanying Zhou, Zipeng Qin, Xinyi Shen, Lin-Bao Luo
Summary: The research presents the construction of a multilayered PtSe2/Ge heterostructure-based photodetector array with self-driven ability and fast response speed in the SWIR spectrum region. The photodetector exhibits outstanding photovoltaic effect, high photoresponse performance, and successful integration into optical communication systems.
Article
Chemistry, Physical
Suho Park, Jiyeon Jeon, Vivek Mohan More, Rochelle Safia Lee, Youryang Seo, Minkyung Kim, Phuc Dinh Nguyen, Minkyeong Kim, Jong Su Kim, Yeongho Kim, Sang Jun Lee
Summary: This study demonstrates a bias-selectable two-color heterojunction bandgap engineered InGaAs thin film infrared photodetector grown on InP substrate with high sensitivity and performance for dual-wavelength detection.
APPLIED SURFACE SCIENCE
(2022)
Article
Materials Science, Multidisciplinary
Xiao-Wei Tong, Min Fan, Chao Xie, Li Wang, Hai-Bo Wang, Qin-Qin Qian, Shi-Bin Lu, Lin Jin, Zhong-Xiang Zhang
Summary: This work presents a sensitive wavelength sensor that can quantitatively discriminate incident light wavelengths from deep-ultraviolet to near-infrared spectrum. The sensor is composed of a PdTe2/thin Si/PdTe2 heterojunction and has the ability to work without an external power supply. The sensor shows different spectral responses based on the direction of light irradiation.
JOURNAL OF MATERIALS CHEMISTRY C
(2022)
Article
Physics, Multidisciplinary
Hong Zhu, He Zhu, Jiafeng Liu, Xiujun Hao, Yan Teng, Yunlong Huai, Meng Li, Zhen Liu, Yong Huang
Summary: In this study, InPSb/InAs superlattice (SL) materials and devices were grown and characterized using metalorganic chemical vapor deposition (MOCVD). The materials exhibited good structural quality and smooth surfaces, while the devices demonstrated high performance, particularly at low temperatures.
Article
Materials Science, Multidisciplinary
Fengren Cao, Liansong Liu, Liang Li
Summary: Short-wavelength infrared (SWIR) light plays a crucial role in various human activities, offering better penetration ability in harsh weather conditions and producing higher resolution images. SWIR devices can work at room temperature without refrigeration, reducing cost and size. Existing reviews have focused on single materials or synthesis strategies, necessitating a more comprehensive overview. This review discusses recent research progress on SWIR photodetectors, including the advantages and disadvantages of devices based on different materials, and provides future perspectives for their application.
Article
Nanoscience & Nanotechnology
John C. Peterson, Philippe Guyot-Sionnest
Summary: Mid-infrared HgTe colloidal quantum dot photovoltaic devices previously achieved background-limited infrared photodetection at cryogenic temperatures, but the efficiency decreased from 20 to 1% from 150 to 300 K. The reduced efficiency was not due to the carrier diffusion length, but instead it was caused by the series resistance. By reducing the device size, the room-temperature quantum efficiency reached 10% and 15% for HgTe colloidal quantum dot devices with cutoff wavelengths of 2400 cm-1 (4.2 μm) and 2675 cm-1 (3.7 μm), respectively. These small area devices achieved background-limited photodetection at 150 K and a detectivity above 109 Jones at room temperature with a cutoff wavelength of 2675 cm-1 (3.7 μm).
ACS APPLIED MATERIALS & INTERFACES
(2023)
Article
Materials Science, Multidisciplinary
Lin-Bao Luo, Ting Fang, Chao Xie, Li Wang, Di Wu, Feng-Xia Liang
Summary: A wavelength sensor capable of distinguishing illumination with wavelengths ranging from ultraviolet to near infrared has been developed. The sensor is composed of two parallelly stacking graphene/thin Si/graphene heterojunction devices, displaying different optical properties under various light illuminations according to theoretical simulation. The numerical equation can accurately determine the wavelength in the range from 265 to 1050 nm with a low error rate, suggesting potential application for future optoelectronic systems.
JOURNAL OF MATERIALS CHEMISTRY C
(2021)
Article
Instruments & Instrumentation
Hao Xie, Hongyu Lin, Ziji Zhou, Zhengji Wen, Yan Sun, Jiaming Hao, Shuhong Hu, Ning Dai
Summary: A pBin InAsSb photodetector structure has been successfully grown using cost-effective Liquid Phase Epitaxy (LPE) technique. The introduction of a high-quality InAsSbP barrier effectively reduces dark current, leading to good room temperature detector performances. The device shows a clear room-temperature photoresponse in the middle wavelength infrared (MWIR) range. Due to the nearly zero valence band offset, the InAsSbP barrier blocks the electron dark current while allowing photogenerated holes to flow, significantly improving the detector's performance. This self-powered device has potential applications in both military and civilian fields. Rating: 8/10.
INFRARED PHYSICS & TECHNOLOGY
(2023)
Article
Materials Science, Multidisciplinary
Qinxi Qiu, Jingbo Li, Tuntan Wu, Lin Jiang, Yongzhen Li, Wanli Ma, Niangjuan Yao, Zhiming Huang
Summary: The study demonstrates a 3D MSM structure silicon detector based on multiple detection mechanisms, capable of highly sensitive detection of near infrared and terahertz light at room temperature, with excellent performance.
JOURNAL OF MATERIALS CHEMISTRY C
(2022)
Article
Multidisciplinary Sciences
Qinxi Qiu, Wanli Ma, Jingbo Li, Lin Jiang, Wangchen Mao, Xuehui Lu, Niangjuan Yao, Yi Shi, Zhiming Huang
Summary: In this study, a room temperature THz photodetector utilizing the electromagnetic induced well mechanism with an SOI-based structure was reported. The detector achieved high sensitivity, fast response, and low noise equivalent power, paving the way for the realization of Si-based THz focal plane arrays with wide applications.
Article
Materials Science, Multidisciplinary
Himani Arora, Zahra Fekri, Yagnika Nandlal Vekariya, Phanish Chava, Kenji Watanabe, Takashi Taniguchi, Manfred Helm, Artur Erbe
Summary: In this study, a fully-encapsulated BP-based field-effect transistor (FET) scheme is employed using a lithography-free via-encapsulation method. The electrical properties of the via-encapsulated BP FETs are found to be significantly improved compared to unencapsulated devices. The results demonstrate that the via-contacting scheme leads to superior performance in terms of higher mobility, lower hysteresis, and long-term ambient stability in BP FETs.
ADVANCED MATERIALS TECHNOLOGIES
(2023)
Article
Physics, Condensed Matter
O. Steuer, D. Schwarz, M. Oehme, J. Schulze, R. Kudrawiec, I. A. Fischer, R. Heller, R. Huebner, M. M. Khan, Y. M. Georgiev, S. Zhou, M. Helm, S. Prucnal
Summary: In this article, strain and band-gap engineering in Ge1-x Sn (x) alloys grown on Ge virtual substrate using post-growth nanosecond pulsed laser melting (PLM) is presented. The initial in-plane compressive strain is removed, and the Ge0.89Sn0.11 layer becomes tensile strained for PLM energy densities higher than 0.5 J cm(-2). The crystalline quality and Sn-distribution in PLM-treated Ge0.89Sn0.11 layers are only slightly affected, and the change of the band structure after PLM is confirmed.
JOURNAL OF PHYSICS-CONDENSED MATTER
(2023)
Article
Chemistry, Multidisciplinary
Xing Huang, Shuai Fu, Cong Lin, Yang Lu, Mingchao Wang, Peng Zhang, Chuanhui Huang, Zichao Li, Zhongquan Liao, Ye Zou, Jian Li, Shengqiang Zhou, Manfred Helm, Petko St. Petkov, Thomas Heine, Mischa Bonn, Hai I. Wang, Xinliang Feng, Renhao Dong
Summary: In this study, a strategy for synthesizing high-mobility semiconducting conjugated coordination polymers (c-CPs) using novel conjugated ligands with D2h symmetry was demonstrated. The reduced symmetry of the 4 + 2 ligands compared to conventional phenyl ligands led to anisotropic coordination in the formation of c-CPs. A single-crystalline three-dimensional (3D) c-CP Cu4DHTTB with orthogonal ribbon-like pi-d conjugated chains was successfully achieved. This c-CP exhibited a small band gap, dispersive energy bands, and high charge carrier mobilities, laying the foundation for high-performance c-CP-based (opto-)electronics.
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY
(2023)
Article
Engineering, Electrical & Electronic
Mao Wang, M. S. Shaikh, U. Kentsch, R. Heller, Shengqiang Zhou
Summary: Single-crystalline Mg-implanted Si layers were synthesized through ion implantation and pulsed laser melting. The Mg doping concentration reached 10(21) cm(-3). Recrystallization of the Mg-implanted Si layer was confirmed by Raman, Rutherford backscattering spectrometry/channeling, and particle-induced x-ray emission measurements. The Mg-implanted Si layers exhibited strong below band gap infrared absorption in the mid-infrared range, which was attributed to deep levels induced by high implantation levels of Mg atoms. This study highlights the potential of Mg-implanted Si for room-temperature light detection in a broad infrared range for Si-based photonics.
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
(2023)
Article
Chemistry, Multidisciplinary
Yi Li, Juanmei Duan, Yonder Berencen, Rene Hubner, Hsu-Sheng Tsai, Chia-Nung Kuo, Chin Shan Lue, Manfred Helm, Shengqiang Zhou, Slawomir Prucnal
Summary: In this work, we fabricated vertical p-n heterojunctions made of p-type tin monoselenide (SnSe) and n-type tin diselenide (SnSe2) through NH3 plasma-assisted phase transformation. Optimal plasma parameters were determined for the full transformation of SnSe2 into SnSe within a few seconds. The crystal quality and topography of the heterostructures were characterized using micro-Raman spectroscopy and transmission electron microscopy, and the formation of a p-n junction was confirmed through current-voltage measurements.
NANOSCALE ADVANCES
(2023)
Article
Physics, Multidisciplinary
M. Helm, S. Winnerl, A. Pashkin, J. M. Klopf, J. -c. Deinert, S. Kovalev, P. Evtushenko, U. Lehnert, R. Xiang, A. Arnold, A. Wagner, S. M. Schmidt, U. Schramm, T. Cowan, P. Michel
Summary: This article describes the coherent infrared and THz sources driven by the superconducting electron accelerator ELBE. The current status of the facility is summarized and a few scientific highlights are mentioned. Finally, plans for a successor facility (Dresden Advanced Light Infrastructure, DALI) are outlined along with the most important scientific and technological challenges.
EUROPEAN PHYSICAL JOURNAL PLUS
(2023)
Article
Physics, Applied
Yongjian Luo, Changan Wang, Chao Chen, Yuan Gao, Fei Sun, Caiwen Li, Xiaozhe Yin, Chunlai Luo, Ulrich Kentsch, Xiangbin Cai, Mei Bai, Zhen Fan, Minghui Qin, Min Zeng, Jiyan Dai, Guofu Zhou, Xubing Lu, Xiaojie Lou, Shengqiang Zhou, Xingsen Gao, Deyang Chen, Jun-Ming Liu
Summary: In order to enhance energy storage density, both maximum polarization (P-max) and breakdown strength (E-b) need to be improved, even though they are inversely correlated. This study achieved order-disorder transition induced polar nanoregions in PbZrO3 thin films through low-energy ion implantation, overcoming the tradeoff between high polarizability and breakdown strength. This resulted in a tripling of the energy storage density from 20.5 to 62.3 J/cm(3) and a significant enhancement of breakdown strength. This approach can be extended to other dielectric oxides to improve energy storage performance and tailor oxide functionalities.
APPLIED PHYSICS REVIEWS
(2023)
Article
Physics, Applied
Moritz Hoesch, Olena Fedchenko, Mao Wang, Christoph Schlueter, Dmitrii Potorochin, Katerina Medjanik, Sergey Babenkov, Anca S. Ciobanu, Aimo Winkelmann, Hans-Joachim Elmers, Shengqiang Zhou, Manfred Helm, Gerd Schoenhense
Summary: Multiple dopant configurations of Te impurities in silicon are investigated using various techniques. Strong chemical core level shifts distinguish these configurations from isolated impurities. Multi-Te configurations, such as dimers or Te ions surrounding a vacancy, are clearly identified. The results contribute to understanding the exceptional activation of free charge carriers in hyperdoping of chalcogens in silicon.
APPLIED PHYSICS LETTERS
(2023)
Article
Physics, Applied
Juanmei Duan, Maciej O. Liedke, Wojciech Dawidowski, Rang Li, Maik Butterling, Eric Hirschmann, Andreas Wagner, Mao Wang, Lawrence Boyu Young, Yen-Hsun Glen Lin, Minghwei Hong, Manfred Helm, Shengqiang Zhou, Slawomir Prucnal
Summary: In this study, the effect of intense pulsed light melting on defect distribution and activation efficiency in chalcogenide-implanted GaAs was investigated. The results showed that after nanosecond pulsed light melting, the main defects in heavily doped GaAs are gallium vacancies decorated with chalcogenide atoms substituting As.
JOURNAL OF APPLIED PHYSICS
(2023)
Proceedings Paper
Engineering, Electrical & Electronic
Marcos G. Faria, Stephan Winnerl, Alexej Pashkin, Manfred Helm, Ece Uykur
Summary: In this study, the temperature- and fluence-dependent carrier dynamics of different magnetic Kagome metals were investigated using the optical pump-probe technique. Distinct carrier relaxations were observed, which can be partly attributed to a simple two-temperature model.
2023 48TH INTERNATIONAL CONFERENCE ON INFRARED, MILLIMETER, AND TERAHERTZ WAVES, IRMMW-THZ
(2023)
Article
Chemistry, Multidisciplinary
Xiaoyue Shi, Yiqi Ling, Youcong Li, Guanhua Li, Juan Li, Lingwei Wang, Fanhong Min, Rene Huebner, Shuai Yuan, Jinhua Zhan, Bin Cai
Summary: This study presents a novel approach for achieving complete glucose electrooxidation using a Cu-based metal-hydroxide-organic framework, which exhibits significantly improved electrocatalytic activity and enables the exclusive oxidation of glucose into formate and carbonate. A high-performance nonenzymatic glucose sensor was also developed. This work provides a new molecule-level strategy for designing catalytically active sites and has potential implications for the development of next-generation electrochemical devices.
ANGEWANDTE CHEMIE-INTERNATIONAL EDITION
(2023)
Article
Materials Science, Multidisciplinary
Ivan Fotev, Stephan Winnerl, Saicharan Aswartham, Sabine Wurmehl, Bernd Buechner, Harald Schneider, Manfred Helm, Alexej Pashkin
Summary: In this study, the suppression of spin density wave (SDW) order in BaFe2As2 under pressure was investigated using optical pump-probe technique. The results show that the pressure-induced suppression of SDW order at low temperature occurs gradually, in contrast to the thermally induced SDW transition. This suggests that the pressure-driven quantum phase transition in BaFe2As2 (and probably other iron pnictides) is continuous and it is caused by the gradual worsening of the Fermi-surface nesting conditions.