4.7 Article

High performing solution-coated electrolyte-gated organic field-effect transistors for aqueous media operation

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SCIENTIFIC REPORTS
卷 6, 期 -, 页码 -

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NATURE PUBLISHING GROUP
DOI: 10.1038/srep39623

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资金

  1. ERC StG [2012-306826]
  2. DGI (Spain) [CTQ2013-40480-R]
  3. National Natural Science Foundation (NSF) of China [11404266]
  4. Fundamental Research Funds for the Central Universities of China [XDJK2014C081]
  5. Spanish Ministry of Economy and Competitiveness, through the 'Severo Ochoa' Programme for Centres of Excellence in RD [SEV-2015-0496]
  6. European Union [600388]
  7. Agency for Business Competitiveness of the Government of Catalonia, ACCIO

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Since the first demonstration, the electrolyte-gated organic field-effect transistors (EGOFETs) have immediately gained much attention for the development of cutting-edge technology and they are expected to have a strong impact in the field of (bio-) sensors. However EGOFETs directly expose their active material towards the aqueous media, hence a limited library of organic semiconductors is actually suitable. By using two mostly unexplored strategies in EGOFETs such as blended materials together with a printing technique, we have successfully widened this library. Our benchmarks were 6,13-bis (triisopropylsilylethynyl) pentacene and 2,8-difluoro-5,11-bis (triethylsilylethynyl) anthradithiophene (diF-TES-ADT), which have been firstly blended with polystyrene and secondly deposited by means of the bar-assisted meniscus shearing (BAMS) technique. Our approach yielded thin films (i.e. no thicker than 30 nm) suitable for organic electronics and stable in liquid environment. Up to date, these EGOFETs show unprecedented performances. Furthermore, an extremely harsh environment, like NaCl 1M, has been used in order to test the limit of operability of these electronic devices. Albeit an electrical worsening is observed, our devices can operate under different electrical stresses within the time frame of hours up to a week. In conclusion, our approach turns out to be a powerful tool for the EGOFET manufacturing.

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