Trap-mediated electronic transport properties of gate-tunable pentacene/MoS2 p-n heterojunction diodes
出版年份 2016 全文链接
标题
Trap-mediated electronic transport properties of gate-tunable pentacene/MoS2 p-n heterojunction diodes
作者
关键词
-
出版物
Scientific Reports
Volume 6, Issue 1, Pages -
出版商
Springer Nature
发表日期
2016-11-10
DOI
10.1038/srep36775
参考文献
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