4.7 Article

The Interface between Gd and Monolayer MoS2: A First-Principles Study

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SCIENTIFIC REPORTS
卷 4, 期 -, 页码 -

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NATURE RESEARCH
DOI: 10.1038/srep07368

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资金

  1. National Natural Science Foundation of China [51171126]
  2. Key Project of the Natural Science Foundation of Tianjin City [12JCZDJC27100]
  3. Program for New Century Excellent Talents in University [NCET-13-0409]
  4. Scientific Research Foundation for the Returned Overseas Chinese Scholars, State Education Ministry
  5. King Abdullah University of Science and Technology (KAUST)

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We analyze the electronic structure of interfaces between two-, four- and six-layer Gd(0001) and monolayer MoS2 by first-principles calculations. Strong chemical bonds shift the Fermi energy of MoS2 upwards into the conduction band. At the surface and interface the Gd f states shift to lower energy and new surface/interface Gd d states appear at the Fermi energy, which are strongly hybridized with the Mo 4d states and thus lead to a high spin-polarization (ferromagnetically ordered Mo magnetic moments of 0.15 mu(B)). Gd therefore is an interesting candidate for spin injection into monolayer MoS2.

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