First Principles Prediction of the Magnetic Properties of Fe-X6 (X = S, C, N, O, F) Doped Monolayer MoS2

Prediction of two-dimensional diluted magnetic semiconductors: Doped monolayer MoS2systems

(2013) Y. C. Cheng et al.   PHYSICAL REVIEW B

Mn-doped monolayer MoS2: An atomically thin dilute magnetic semiconductor

(2013) Ashwin Ramasubramaniam et al.   PHYSICAL REVIEW B

Possible doping strategies for MoS2monolayers: Anab initiostudy

(2013) Kapildeb Dolui et al.   PHYSICAL REVIEW B

Tuning the Electronic Properties of Semiconducting Transition Metal Dichalcogenides by Applying Mechanical Strains

(2012) Priya Johari et al.   ACS Nano

Control of valley polarization in monolayer MoS2 by optical helicity

(2012) Kin Fai Mak et al.   Nature Nanotechnology

Carrier-mediated long-range ferromagnetism in electron-doped Fe-C4and Fe-N4incorporated graphene

(2012) Alex Taekyung Lee et al.   PHYSICAL REVIEW B

Gold-embedded zigzag graphene nanoribbons as spin gapless semiconductors

(2012) Xiaohui Hu et al.   PHYSICAL REVIEW B

Effects of confinement and environment on the electronic structure and exciton binding energy of MoS2from first principles

(2012) Hannu-Pekka Komsa et al.   PHYSICAL REVIEW B

Large excitonic effects in monolayers of molybdenum and tungsten dichalcogenides

(2012) Ashwin Ramasubramaniam   PHYSICAL REVIEW B

Quasiparticle band structure calculation of monolayer, bilayer, and bulk MoS2

(2012) Tawinan Cheiwchanchamnangij et al.   PHYSICAL REVIEW B

Functionalization of Single-Layer MoS2 Honeycomb Structures

(2011) C. Ataca et al.   Journal of Physical Chemistry C

MoS2Nanoparticles Grown on Graphene: An Advanced Catalyst for the Hydrogen Evolution Reaction

(2011) Yanguang Li et al.   JOURNAL OF THE AMERICAN CHEMICAL SOCIETY

Single-layer MoS2 transistors

(2011) B. Radisavljevic et al.   Nature Nanotechnology

Giant spin-orbit-induced spin splitting in two-dimensional transition-metal dichalcogenide semiconductors

(2011) Z. Y. Zhu et al.   PHYSICAL REVIEW B

Emerging Photoluminescence in Monolayer MoS2

(2010) Andrea Splendiani et al.   NANO LETTERS

Divacancy-nitrogen-assisted transition metal dispersion and hydrogen adsorption in defective graphene: A first-principles study

(2010) Woon Ih Choi et al.   PHYSICAL REVIEW B

Atomically ThinMoS2: A New Direct-Gap Semiconductor

(2010) Kin Fai Mak et al.   PHYSICAL REVIEW LETTERS

First-principles theory of dilute magnetic semiconductors

(2010) K. Sato et al.   REVIEWS OF MODERN PHYSICS

Electronic structure of two-dimensional crystals fromab initiotheory

(2009) S. Lebègue et al.   PHYSICAL REVIEW B

MoS2Nanoribbons: High Stability and Unusual Electronic and Magnetic Properties

(2008) Yafei Li et al.   JOURNAL OF THE AMERICAN CHEMICAL SOCIETY

Proposal for a New Class of Materials: Spin Gapless Semiconductors

(2008) X. L. Wang   PHYSICAL REVIEW LETTERS