4.7 Article

Microwave-assisted Low-temperature Growth of Thin Films in Solution

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SCIENTIFIC REPORTS
卷 2, 期 -, 页码 -

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NATURE PUBLISHING GROUP
DOI: 10.1038/srep01003

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  1. U.S. Department of Energy, Office of Basic Energy Sciences, Division of Materials Science and Engineering [DE-SC0005397]
  2. Energy Frontier Research Center
  3. U.S. Department of Energy, Office of Science, Office of Basic Energy Sciences [DE-SC0001091]
  4. National Science Foundation [OCI-0904907]
  5. Direct For Computer & Info Scie & Enginr
  6. Office of Advanced Cyberinfrastructure (OAC) [0904907] Funding Source: National Science Foundation

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Thin films find a variety of technological applications. Assembling thin films from atoms in the liquid phase is intrinsically a non-equilibrium phenomenon, controlled by the competition between thermodynamics and kinetics. We demonstrate here that microwave energy can assist in assembling atoms into thin films directly on a substrate at significantly lower temperatures than conventional processes, potentially enabling plastic-based electronics. Both experimental and electromagnetic simulation results show microwave fields can selectively interact with a conducting layer on the substrate despite the discrepancy between the substrate size and the microwave wavelength. The microwave interaction leads to localized energy absorption, heating, and subsequent nucleation and growth of the desired films. Electromagnetic simulations show remarkable agreement with experiments and are employed to understand the physics of the microwave interaction and identify conditions to improve uniformity of the films. The films can be patterned and grown on various substrates, enabling their use in widespread applications.

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