标题
Strain-engineering the electronic properties and anisotropy of GeSe2 monolayers
作者
关键词
-
出版物
RSC Advances
Volume 8, Issue 58, Pages 33445-33450
出版商
Royal Society of Chemistry (RSC)
发表日期
2018-09-28
DOI
10.1039/c8ra06606j
参考文献
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