Enhanced emission from ZnO-based double heterostructure light-emitting devices using a distributed Bragg reflector

Double hetero-structured n-Mg0.13Zn0.87O/i-ZnO/p-Mg0.13Zn0.87O light-emitting devices (LEDs) have been fabricated, and the p-type Mg0.13Zn0.87O layer was obtained via a lithium-nitrogen codoping method. Obvious emission at around 400 nm has been observed from the LEDs under forward bias. To increase the light extraction from the LEDs, a distributed Bragg reflector whose reflectivity is 98% at 400 nm was bonded on the back side of the device, and the emission of the device was enhanced by around 1.6 times with the reflector.