Atomic layer deposition of textured zinc nitride thin films

Zinc nitride films are deposited by Atomic Layer Deposition (ALD) within a temperature range of 150-315 degrees C using diethylzinc (DEZ) and ammonia (NH3). Self-limiting growth characteristics are examined by an in situ Quartz crystal microbalance (QCM) that is subsequently verified and complemented by ex situ X-ray reflectivity (XRR) measurements. A saturated growth rate of ca. 1.4 angstrom per ALD cycle is obtained within the ALD temperature window of 175-215 degrees C. In situ Fourier transform infrared (FTIR) spectroscopy is employed to study the reaction mechanism during each ALD half cycle. As deposited films on microscope glass substrates have strong orientation in the {321} direction. Films are found to be optically transparent with band-edge photoluminescence.