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Ordered High-Density Si [100] Nanowire Arrays Epitaxially Grown by Bottom Imprint Method

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Method for Suppression of Stacking Faults in Wurtzite III−V Nanowires

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Determination of Size Effects during the Phase Transition of a Nanoscale Au-Si Eutectic

(2009) B. J. Kim et al.   PHYSICAL REVIEW LETTERS

Effect of two-step growth process on structural, optical and electrical properties of MOVPE-grown GaP/Si

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Extended Arrays of Vertically Aligned Sub-10 nm Diameter [100] Si Nanowires by Metal-Assisted Chemical Etching

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Control of InAs Nanowire Growth Directions on Si

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Twinning superlattices in indium phosphide nanowires

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