Hysteresis Type Current-Voltage Characteristics of Indium Tin Oxide/Poly-[2-Methoxy-5-(2′-Ethyl-Hexyloxy)-1,4-Phenylenevinylene] (MEHPPV) plus Zinc Oxide (ZnO)/Al Structure: Towards Memory Device

Hysteresis type current voltage characteristics fabricated on spin coating of poly-[2-methoxy-5-(2'-ethyl-hexyloxy)-1,4-phenylenevinylene] (MEHPPV) with Zinc oxide (ZnO) [MEHPPV + ZnO] nanoparticles onto ITO coated glass. The current voltage I-V characteristics of devices show hysteresis behavior, and the hysteresis is formally described by different voltage amplitudes for the sweep from negative to positive bias and the reverse direction. Based on experimental results, the authors suggested that donor like trap states within the MEH-PPV + ZnO layer controlled carrier flow and resulted in hysteresis-type I-V characteristics of ITO/MEH-PPV+ZnO/Al memory devices. This demonstration provides a class of memory devices with the potential for extremely low-cost, low-power consumption applications, such as nonvolatile memory applications.