Comprehensive Study of Lanthanum Aluminate High-Dielectric-Constant Gate Oxides for Advanced CMOS Devices

Gate-First Metal-Gate/High-$k$ n-MOSFETs With Deep Sub-nm Equivalent Oxide Thickness (0.58 nm) Fabricated With Sulfur-Implanted Schottky Source/Drain Using a Low-Temperature Process

(2011) Masamichi Suzuki et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Ultrathin EOT high-κ/metal gate devices for future technologies: Challenges, achievements and perspectives (invited)

(2011) L.-Å. Ragnarsson et al.   MICROELECTRONIC ENGINEERING

Low-Threshold-Voltage TaN/LaTiO n-MOSFETs With Small EOT

(2009) S.H. Lin et al.   IEEE ELECTRON DEVICE LETTERS

Effect of Composition in Ternary La–Al–O Films on Flat-Band Voltage for Application to Dual High-kGate Dielectric Technology

(2009) Masamichi Suzuki et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Investigation of stability of the effective work function on LaAlO3 and La2Hf2O7

(2009) Masamichi Suzuki et al.   JOURNAL OF APPLIED PHYSICS

Band gap engineering for La aluminate dielectrics on Si (100)

(2008) Hua Jin et al.   APPLIED PHYSICS LETTERS

LaAlO3 gate dielectric with ultrathin equivalent oxide thickness and ultralow leakage current directly deposited on Si substrate

(2008) Masamichi Suzuki et al.   JOURNAL OF APPLIED PHYSICS

Interface strain study of thin Lu2O3/Si using HRBS

(2008) T.K. Chan et al.   NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS

Strain enhancement in Si induced by direct bonding of a LaAlO3 film to a Si substrate

(2008) M. Suzuki et al.   NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS