Ultraviolet Photodetection Properties of ZnO/Si Heterojunction Diodes Fabricated by ALD Technique Without Using a Buffer Layer

标题
Ultraviolet Photodetection Properties of ZnO/Si Heterojunction Diodes Fabricated by ALD Technique Without Using a Buffer Layer
作者
关键词
-
出版物
Journal of Semiconductor Technology and Science
Volume 14, Issue 1, Pages 117-123
出版商
The Institute of Electronics Engineers of Korea
发表日期
2014-04-02
DOI
10.5573/jsts.2014.14.1.117

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