期刊
JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE
卷 14, 期 3, 页码 268-273出版社
IEEK PUBLICATION CENTER
DOI: 10.5573/JSTS.2014.14.3.268
关键词
Realistic cell structure optimization; finite element method (FEM); bipolar resistive random access memory (RRAM)
资金
- NRF of Korea - MSIP [NRF-2012R1A2A2A01006159]
- NIPA - MSIP [NIPA-2014-H0301-14-1007]
- KEIT - MOTIE [10039174]
- MOTIE/KSRC [10044842]
- Sogang University [201410038]
The forming, reset and set operation of bipolar resistive random access memory (RRAM) have been predicted by using a finite element (FE) model which includes interface effects. To the best of our knowledge, our bipolar RRAM model is applicable to realistic cell structure optimization because our model is based on the FE method (FEM) unlike precedent models.
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