Article
Materials Science, Multidisciplinary
Hiroyuki Nishinaka, Kazuki Shimazoe, Kazutaka Kanegae, Masahiro Yoshimoto
Summary: The study conducted mist chemical vapor deposition to fabricate alpha-Ga2O3 epitaxial thin films on alpha-Fe2O3 substrates. XRD analysis confirmed the epitaxial growth of c-plane alpha-Ga2O3 thin films on c-plane alpha-Fe2O3 substrates. The use of alpha-Fe2O3 substrates resulted in lower asymmetric diffraction (10-14) full width at half maximum for alpha-Ga2O3 compared to alpha-Al2O3. Additionally, XRD pole figure analysis indicated that alpha-Ga2O3 on alpha-Fe2O3 had no in-plane rotations, suggesting that alpha-Fe2O3 substrates with small lattice mismatches are promising for alpha-Ga2O3 without rotational domains.
Article
Mathematics, Interdisciplinary Applications
M. Abdel Baki, L. Badr
Summary: Two-dimensional lead dendritic systems with fractal character were prepared by electroless deposition. The fractal dimension of the dendritic structures is influenced by lead nitrate concentration and medium properties, affecting migration and aggregation of lead particles. The maximum fractal dimension was found for aggregates formed from 0.06 M Pb(NO3)2 in 5% gelatin.
CHAOS SOLITONS & FRACTALS
(2021)
Article
Materials Science, Multidisciplinary
Hyung-Jin Choi, Jinhyuk Jang, Soo Young Jung, Ruiguang Ning, Min-Seok Kim, Sung-Jin Jung, Jun Young Lee, Jin Soo Park, Byung Chul Lee, Ji-Soo Jang, Seong Keun Kim, Kyu Hyoung Lee, June Hyuk Lee, Sung Ok Won, Yulan Li, Shenyang Hu, Si-Young Choi, Seung-Hyub Baek
Summary: In this study, a simple annealing technique was reported to significantly improve the crystalline quality of YSZ on Si substrates by utilizing thermal stresses and the difference in thermal expansion coefficients. High-quality epitaxial CeO2 and Y:HfO2 thin films were successfully integrated on YSZ/Si substrates using this method.
JOURNAL OF MATERIALS CHEMISTRY C
(2022)
Article
Chemistry, Multidisciplinary
Fan Ru, Jing Xia, Xuanze Li, Pei Liu, Peiyu Qiao, Yuye Li, Jianyu Cao, Lifeng Tian, Wenjun Zhang, Xiang-Min Meng
Summary: This report demonstrates the successful remote heteroepitaxy of single-crystalline ZnO/ZnS core/shell nanowires using amorphous HfO2 as the buffer layer. By adjusting the buffer layer thickness, zinc blende or wurtzite ZnS epilayers can be efficiently fabricated. The cathodoluminescence measurement shows that tuning of the optical properties can be achieved by preparing a heterostructure with HfO2.
Article
Nanoscience & Nanotechnology
Eugenio Zallo, Andrea Pianetti, Alexander S. S. Prikhodko, Stefano Cecchi, Yuliya S. S. Zaytseva, Alessandro Giuliani, Malte Kremser, Nikolai I. I. Borgardt, Jonathan J. J. Finley, Fabrizio Arciprete, Maurizia Palummo, Olivia Pulci, Raffaella Calarco
Summary: In this study, large-area, single-crystal, and optically active 2D monoclinic gallium telluride (m-GaTe) was successfully fabricated on a silicon substrate via rapid thermal annealing-induced phase transformation of vdW epitaxial metastable hexagonal gallium telluride (h-GaTe). The stabilization of multilayer h-GaTe on Si was attributed to the role of the first layer symmetry and efficient surface passivation of GaTe. Furthermore, the phase transformation from h-GaTe to m-GaTe was accompanied by strain relaxation between the Si substrate and GaTe. This method opens up a new pathway for the fabrication of single-crystal 2D anisotropic semiconductors on standard crystalline wafers that are difficult to obtain by epitaxial methods.
NPJ 2D MATERIALS AND APPLICATIONS
(2023)
Article
Physics, Applied
Wensen Ai, Xuejiang Chen, Jianmei Feng
Summary: A three-dimensional Kinetic Monte Carlo model is established to investigate the microscopic evolution and origins of crystalline anisotropy during the epitaxial growth of 3C-SiC (0001) vicinal surface. The results show that the lateral growth rate is higher in the [1-210] direction compared to the <1-100> direction, and zigzag and meandering step patterns form in the [1-210] and <1-100> directions respectively. The origins of anisotropy are attributed to the concentration and bonding energy difference of edge sites, as well as the adatom diffusion along the edge.
JOURNAL OF APPLIED PHYSICS
(2022)
Article
Chemistry, Multidisciplinary
James P. Barnard, Robynne L. Paldi, Matias Kalaswad, Zihao He, Hongyi Dou, Yizhi Zhang, Jianan Shen, Dongqi Zheng, Neil R. Dilley, Raktim Sarma, Aleem M. Siddiqui, Peide D. Ye, Haiyan Wang
Summary: Integration of functional complex oxides with nanoelectronic devices has become a topic of great interest. However, integrating them with Si-based devices is challenging due to material and processing compatibility issues. In this study, a buffer stack of TiN/SrTiO3/CeO2 was used to successfully integrate the BFMO layered supercell phase on Si with high epitaxial quality. The microstructure, magnetic, ferroelectric, and optical properties of BFMO films on Si were characterized and compared with those on SrTiO3 single-crystal substrates, showing comparable epitaxial quality and physical properties.
CRYSTAL GROWTH & DESIGN
(2023)
Article
Materials Science, Multidisciplinary
Hao-Ting Chin, Hai-Thai Nguyen, Szu-Hua Chen, Yi-Fang Chen, Wei-Hung Chen, Zhi-Yang Chou, Yi-Hung Chu, Zhi-Long Yen, Chu-Chi Ting, Mario Hofmann, Ya-Ping Hsieh
Summary: By optimizing the interaction between precursor and substrate, reaction-controlled growth of 2D materials can be achieved, leading to increased growth efficiency and speed. This new approach significantly improves the growth rate of graphene by orders of magnitude, allowing for synthesis even in atomic-scale pores.
Article
Instruments & Instrumentation
Chun Zhao, Yuting Yan, Gangqiang Tang, Xin Zhao, Dong Mei, Yanjie Wang
Summary: Ionic polymer metal composites (IPMCs) with dendritic interfacial electrodes (DIEs) have been studied for their excellent actuation performance. However, there is a lack of research on simulating the growth of DIEs inside IPMC. In this study, an electrode model based on diffusion-limited aggregation method was proposed to simulate the growth process of DIEs inside IPMC. The effects of immersion reduction cycles, immersion electroplating time, electroplating cycles, current intensity, and voltage amplitude on the morphology and microstructure of DIEs were investigated. The results provide insights into the formation mechanism of IPMC with DIEs.
SMART MATERIALS AND STRUCTURES
(2023)
Article
Chemistry, Multidisciplinary
Jingyi Hu, Wenzhi Quan, Pengfei Yang, Fangfang Cui, Fachen Liu, Lijie Zhu, Shuangyuan Pan, Yahuan Huan, Fan Zhou, Jiatian Fu, Guanhua Zhang, Peng Gao, Yanfeng Zhang
Summary: Here, the epitaxial growth of unidirectionally aligned monolayer MoS2 domains and single-crystal films on low-symmetry Au(101) vicinal facets via a facile chemical vapor deposition method is reported. On-site scanning tunneling microscopy observations reveal the formation of a specific rectangular Moire pattern along the [10 (1) over bar] step edge of Au(101) and along its perpendicular direction. This work proposes a symmetry mismatched epitaxial system for the direct synthesis of monolayer MoS2 single crystals, leading to a better understanding of the epitaxy of 2D layered materials and promoting their applications in various fields.
Article
Physics, Fluids & Plasmas
J. M. Tenti, S. N. Hernandez Guiance, I. M. Irurzun
Summary: This work focuses on studying the fractal properties of diffusion-limited aggregation (DLA) clusters grown on spherical surfaces, analyzing the influence of discretization and projection on the fractal dimension of DLA clusters, and discussing the importance of considering these factors in the interpretation of photographic biomedical images.
Article
Chemistry, Physical
Satoru Kaneko, Takashi Tokumasu, Manabu Yasui, Masahito Kurouchi, Shigeo Yasuhara, Tamio Endo, Masaki Azuma, Akufumi Matsuda, Mamoru Yoshimoto, Sumanta Kumar Sahoo, Kripasindhu Sardar, Jyh-Ming Ting, Masahiro Yoshimura
Summary: This article investigates the challenges of direct growth of oxide films on silicon and the thermodynamic stability of binary oxides. Using magnesium oxide as an example, the study predicts the crystal orientation of epitaxial growth on silicon surface and confirms it with experimental results. The evaluation of adsorption energy can serve as a guideline for the epitaxial growth of oxide materials on silicon surface.
APPLIED SURFACE SCIENCE
(2022)
Article
Chemistry, Physical
Bo Li, Zhong Wan, Cong Wang, Peng Chen, Bevin Huang, Xing Cheng, Qi Qian, Jia Li, Zhengwei Zhang, Guangzhuang Sun, Bei Zhao, Huifang Ma, Ruixia Wu, Zhongming Wei, Yuan Liu, Lei Liao, Yu Ye, Yu Huang, Xiaodong Xu, Xidong Duan, Wei Ji, Xiangfeng Duan
Summary: The research discovered that CrSe2 nanosheets can be grown on a WSe2 substrate, displaying stable environmental stability and tunable thickness. No significant changes in surface roughness or magnetic properties were observed in these heterostructures after months of exposure in air. Charge transfer from the WSe2 substrate and interlayer coupling within CrSe2 were found to play critical roles in the magnetic order of CrSe2 nanosheets.
Article
Chemistry, Multidisciplinary
Emanuel M. Avrahami, Zohar Eyal, Neta Varsano, Ievgeniia Zagoriy, Julia Mahamid, Assaf Gal
Summary: This study investigates the growth process of coccolith crystals using advanced electron microscopy techniques. It reveals that the crystals grow alternately between space filling and skeletonized growth modes, with the final morphology influenced by growth arrest. The findings shed light on the delicate regulation of coccolith crystal morphology.
ADVANCED MATERIALS
(2023)
Article
Materials Science, Multidisciplinary
Maoxiang Zhu, Sofiane Achache, Melanie Emo, Alejandro Borroto Ramirez, Jean-Francois Pierson, Frederic Sanchette
Summary: This study investigates the nucleation and growth of alumina films on Ti(C,N)-based layers using an industrial-scale CVD system. It is found that the deposition of Al2O3 layer without nucleation treatment results in pure alpha-Al2O3, while no orientation relationship is observed at the Ti(C,N)/alpha-Al2O3 interface. However, when the Al2O3 layer is deposited on a bonding layer consisting of rutile TiO2, alpha-Al2O3 single-phased layer is obtained with epitaxial growth on rutile. Furthermore, when the Al2O3 layer is deposited on a bonding layer produced from a TiCl4-H2-N-2-CH4-CO-AlCl3 gas mixture, kappa-Al2O3 is epitaxially grown on Ti(C,N). The nucleation of alpha-Al2O3 and kappa-Al2O3 can be accurately controlled by depositing specific bonding layers.
MATERIALS & DESIGN
(2022)
Article
Physics, Applied
Tae-Eon Park, Joonki Suh, Dongjea Seo, Joonsuk Park, Der-Yuh Lin, Ying-Sheng Huang, Heon-Jin Choi, Junqiao Wu, Chaun Jang, Joonyeon Chang
APPLIED PHYSICS LETTERS
(2015)
Article
Nanoscience & Nanotechnology
Jaejun Lee, Sung Wook Kim, Ilsoo Kim, Dongjea Seo, Heon-Jin Choi
NANOSCALE RESEARCH LETTERS
(2015)
Article
Nanoscience & Nanotechnology
Youn Ho Park, Ryong Ha, Tea-Eon Park, Sung Wook Kim, Dongjea Seo, Heon-Jin Choi
NANOSCALE RESEARCH LETTERS
(2015)
Article
Nanoscience & Nanotechnology
Dongjea Seo, Jaejun Lee, Sung Wook Kim, Ilsoo Kim, Jukwan Na, Min-Ho Hong, Heon-Jin Choi
NANOSCALE RESEARCH LETTERS
(2015)
Article
Chemistry, Physical
T. L. Atallah, J. Wang, M. Bosch, D. Seo, R. A. Burke, O. Moneer, Justin Zhu, M. Theibault, L. E. Brus, J. Hone, X. -Y. Zhu
JOURNAL OF PHYSICAL CHEMISTRY LETTERS
(2017)
Article
Chemistry, Multidisciplinary
Xu Cui, En-Min Shih, Luis A. Jauregui, Sang Hoon Chae, Young Duck Kim, Baichang Li, Dongjea Seo, Kateryna Pistunova, Jun Yin, Ji-Hoon Park, Heon-Jin Choi, Young Hee Lee, Kenji Watanabe, Takashi Taniguchi, Philip Kim, Cory R. Dean, James C. Hone
Article
Instruments & Instrumentation
Jungwon Kim, Dong-Jea Seo, Hwanjoo Park, Hoon Kim, Heon-Jin Choi, Woochul Kim
REVIEW OF SCIENTIFIC INSTRUMENTS
(2017)
Article
Chemistry, Multidisciplinary
Young Duck Kim, Yuanda Gao, Ren-Jye Shiue, Lei Wang, Ozgur Burak Aslan, Myung-Ho Bae, Hyungsik Kim, Dongjea Seo, Heon-Jin Choi, Suk Hyun Kim, Andrei Nemilentsau, Tony Low, Cheng Tan, Dmitri K. Efetov, Takashi Taniguchi, Kenji Watanabe, Kenneth L. Shepard, Tony F. Heinz, Dirk Englund, James Hone
Article
Optics
Jin Tae Kim, Jong-Ho Choe, Jin-Soo Kim, Dongjea Seo, Young Duck Kim, Kwang Hyo Chung
OPTICS AND LASER TECHNOLOGY
(2018)
Article
Materials Science, Multidisciplinary
Jeen Moon Yang, Jaejun Lee, Tae-Eon Park, Dongjea Seo, Jeong Min Park, Sangwon Park, Jukwan Na, Juyoung Kwon, Hyo-Jung Lee, Jaehyun Ryu, Heon-Jin Choi
ELECTRONIC MATERIALS LETTERS
(2019)
Article
Physics, Applied
Dongjea Seo, Dong Yun Lee, Junyoung Kwon, Jea Jung Lee, Takashi Taniguchi, Kenji Watanabe, Gwan-Hyoung Lee, Keun Soo Kim, James Hone, Young Duck Kim, Heon-Jin Choi
APPLIED PHYSICS LETTERS
(2019)
Article
Nanoscience & Nanotechnology
Jaejun Lee, Juyoung Kwon, Dongjea Seo, Jukwan Na, Sangwon Park, Hyo-Jung Lee, Seung-Woo Lee, Ki-Young Lee, Tae-Eon Park, Heon-Jin Choi
ACS APPLIED MATERIALS & INTERFACES
(2019)
Article
Chemistry, Multidisciplinary
Hong Je Choi, Ye Seul Jung, Seung Min Lee, Sojung Kang, Dongjea Seo, Hangyel Kim, Heon-Jin Choi, Gwan-Hyoung Lee, Yong Soo Cho
CRYSTAL GROWTH & DESIGN
(2020)
Article
Chemistry, Multidisciplinary
Junyoung Kwon, June-Chul Shin, Huije Ryu, Jae Yoon Lee, Dongjea Seo, Kenji Watanabe, Takashi Taniguchi, Young Duck Kim, James Hone, Chul-Ho Lee, Gwan-Hyoung Lee
ADVANCED MATERIALS
(2020)
Proceedings Paper
Engineering, Electrical & Electronic
Sang Hoon Chae, Dongjea Seo, Qingrui Cao, Xiang Hua, En-Min Shih, Takashi Taniguchi, Kenji Watanabe, Junyoung Kwon, Gwan-Hyoung Lee, Cory R. Dean, David Schiminovich, Irving P. Herman, Heon-jin Choi, Ioannis Kymissis, Young Duck Kim, James Hone
2019 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO)
(2019)