期刊
NANOSCALE RESEARCH LETTERS
卷 10, 期 -, 页码 -出版社
SPRINGER
DOI: 10.1186/s11671-015-0999-8
关键词
Carbon nanotube network; Thin-film transistor; Gate capacitance; Interface trap density
资金
- Michigan State University
- National Science Foundation [ECCS-1549888]
- Div Of Electrical, Commun & Cyber Sys
- Directorate For Engineering [1549888] Funding Source: National Science Foundation
We report the capacitance-voltage (C-V) measurements on thin-film transistors (TFTs) using solution-processed semiconducting carbon nanotube networks with different densities and channel lengths. From the measured C-V characteristics, gate capacitance and field-effect mobility (up to similar to 50 cm(2) V-1 s(-1)) of the TFTs were evaluated with better precision compared with the results obtained from calculated gate capacitance. The C-V characteristics measured under different frequencies further enabled the extraction and analysis of the interface trap density at the nanotube-dielectric layer interface, which was found to increase significantly as the network density increases. The results presented here indicate that C-V measurement is a powerful tool to assess the electrical performance and to investigate the carrier transport mechanism of TFTs based on carbon nanotubes.
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