期刊
FRONTIERS OF PHYSICS
卷 7, 期 2, 页码 208-217出版社
HIGHER EDUCATION PRESS
DOI: 10.1007/s11467-011-0199-7
关键词
topological insulator; nanostructure; synthesis; Raman; transport; surface state manipulation
资金
- National Natural Science Foundation of China [20973007, 20973013, 51072004, 50821061, 20833001, 11104003]
- National Basic Research Program of China [2007CB936203, 2011CB921904, 2011CB933003]
- SRF for ROCS, SEM
Nanostructured topological insulator materials such as ultrathin films, nanoplates, nanowires, and nanoribbons are attracting much attention for fundamental research as well as potential applications in low-energy dissipation electronics, spintronics, thermoelectrics, magnetoelectrics, and quantum computing due to their extremely large surface-to-volume ratios and exotic metallic edge/surface states. Layered Bi2Se3 and Bi2Te3 serve as reference topological insulator materials with a large nontrivial bulk gap up to 0.3 eV (equivalent to 3600 K) and simple single-Dirac-cone surface states. In this mini-review, we present an overview of recent advances in nanostructured topological insulator Bi2Se3 and Bi3Te3 from the viewpoints of controlled synthesis and physical properties. We summarize our recent achievements in the vapor-phase synthesis and structural characterization of nanostructured topological insulator Bi2Se3 and Bi2Te3, such as nanoribbons and ultrathin nanoplates. We also demonstrate the evolution of Raman spectra with the number of few-layer topological insulators, as well as the transport measurements that have succeeded in accessing the surface conductance and surface state manipulations in the device of topological insulator nanostructures.
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