4.6 Article

A robust ionic liquid-polymer gate insulator for high-performance flexible thin film transistors

期刊

JOURNAL OF MATERIALS CHEMISTRY C
卷 3, 期 17, 页码 4239-4243

出版社

ROYAL SOC CHEMISTRY
DOI: 10.1039/c5tc00067j

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资金

  1. Basic Research Program of the National Research Foundation (NRF) of Korea [2011-0018113]
  2. Centre for Advanced Soft-Electronics as Global Frontier Project - Ministry of Science, ICT and Future Planning of Korea [2013M3A6A5073177]

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Herein, we propose an ionic liquid-polymer dielectric layer for flexible electronics reinforced by a chemical interaction between the polymer matrix (PVP) and the ionic liquid. Due to the robust structures of the cross-linked PVP matrix and hydrogen bonding between the ionic liquid and PVP, the ionic liquid-PVP (IL-PVP) layer exhibited a good mechanical strength when bending up to 1000 times and a stable thermal behaviour up to 300 degrees C. Furthermore, the IL-PVP dielectric layer showed a high capacitance value of similar to 2 mu F cm(-2) and was operated well as a gate insulator for flexible ZnO thin film transistors with a linear field-effect mobility of similar to 3.3 cm(2) V-1 s(-1) at a gate bias of 3 V.

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