期刊
JOURNAL OF MATERIALS CHEMISTRY C
卷 3, 期 46, 页码 12149-12155出版社
ROYAL SOC CHEMISTRY
DOI: 10.1039/c5tc02732b
关键词
-
资金
- National Nature Science Foundation of China [51372209]
Over the next few years, it is expected that resistive random access memory (RRAM) will be developed as promising non-volatile memory owing to its advantages of simple structure and high storage density. Thus there is a need for new methods to assemble multifunctional materials for resistive switching memory devices. In this work, we assemble CuO and Al nanoparticles into CuO-DNA-Al nanocomposites, where DNA strands bridge CuO nanoparticles and Al nanoparticles, by a DNA-directed assembly procedure, and investigate their memory behaviors. These CuO-DNA-Al nanocomposites present outstanding improved resistive switching memory behaviors in comparison with physically mixed CuO-Al nanocomposites. Based on the superior memory characteristics of the Au/CuO-DNA-Al/Au/Si device, a model concerning the formation and rupture of the nanoscale DNA strand assisted conductive filament mechanism is therefore suggested to explain the memory behaviors. This work opens up a new route for exploring the multifunctional materials and their applications in nonvolatile RRAM.
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