期刊
IEEE JOURNAL OF PHOTOVOLTAICS
卷 5, 期 4, 页码 1079-1086出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JPHOTOV.2015.2427580
关键词
Luminescent coupling (LC); photon recycling (PR); Si solar cell; III-V solar cell
资金
- National Research Foundation (NRF), Singapore through the Singapore Massachusetts Institute of Technology (MIT) Alliance for Research and Technology's Low Energy Electronic Systems research program
- U.S. Department of Energy through the Bay Area Photovoltaic Consortium [DE-EE0004946]
- National University of Singapore
- Singapore's National Research Foundation through the Singapore Economic Development Board
- Clean Energy Scholarship from NRF Singapore
- National Science Foundation [ECCS-1150878]
- Div Of Electrical, Commun & Cyber Sys
- Directorate For Engineering [1150878] Funding Source: National Science Foundation
We demonstrate a numerical analysis of the device impact of photon reabsorption on single-junction GaAs and tandem GaAs/Si solar cells. A self-consistent optical-electrical model that considers nonideal losses within the devices is developed. For single-junction devices, we find that the impact of photon recycling on the voltage increases monotonically with the injection level. For record-level GaAs solar cells, the voltage boost is 33 mV under open-circuit conditions and 13 mV at the maximum power point. For tandem GaAs/Si solar cells, photon reabsorption moderates the sensitivity of tandem efficiency to both obvious parameters like absorber thickness and implicit parameters like shunt resistance (R-sh) and bulk lifetime. Considering luminescent coupling results in a GaAs top cell that is 9.5% thicker than without luminescent coupling. The tandem device is 50% more sensitive to R-sh changes in the GaAs cell than R-sh changes in the Si cell. The impact of the GaAs top-cell bulk lifetime on tandem efficiency is reduced by 61% if photon reabsorption is not considered. This integrated optoelectronic device model allows one quantification of the implicit effects of photon recycling and luminescent coupling on device parameters for GaAs/Si tandem, providing a valuable tool for high-performance device optimization.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据