期刊
ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY
卷 5, 期 1, 页码 R3170-R3184出版社
ELECTROCHEMICAL SOC INC
DOI: 10.1149/2.0221601jss
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资金
- National Science Foundation [1105907]
- Direct For Mathematical & Physical Scien
- Division Of Materials Research [1105907] Funding Source: National Science Foundation
This paper discusses non-radiative processes that are relevant to the luminescence characteristics of optically active ions doped into insulators or large-gap semiconductors, with particular attention to how these processes are affected as the particle size is reduced from bulk single crystals to as small as a few nanometers. The non-radiative processes discussed in this article are thermal line broadening and thermal line shifting, relaxation via phonons between excited electronic states, vibronic emission and absorption, and phonon-assisted energy transfer. Given that one of the main effects of confinement in these particles is on the phonon density of states, we pay particular attention to how these non-radiative processes are altered due to the change in the phonon density of states as particle size decreases. (C) The Author(s) 2015. Published by ECS.
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