4.6 Article Proceedings Paper

The structural and electrical studies on the Boron-doped SnO2 films deposited by spray pyrolysis

期刊

VACUUM
卷 85, 期 11, 页码 986-989

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PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.vacuum.2011.02.005

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BTO; Structural; FTIR; Scattering mechanism

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The boron-doped SnO2 (BTO) films were prepared by spray pyrolysis. The XRD results shows the preferred orientation of the BTO films changes from plane (110) to (101) as the increasing of boron concentration in SnO2, which further leads to the variation of grains shape on the surfaces. The FTIR and Hall-Effect results indicate the solution process: the boron ions prefer to occupy the interstitial site in SnO2 lattice, which play the role of donor of free electrons; while beyond a certain boron concentration, boron ions start to replace the tin ions of lattice, which has a negative effect on carrier concentration. The scattering mechanism of BTO is also discussed in the paper based on the grain size and meal free path. (C) 2011 Elsevier Ltd. All rights reserved.

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