期刊
ULTRAMICROSCOPY
卷 195, 期 -, 页码 93-100出版社
ELSEVIER
DOI: 10.1016/j.ultramic.2018.08.025
关键词
Scanning electron microscopy; High resolution digital image correlation; Scan generator; SEM; Imaging defects; Image processing
类别
资金
- Office of Naval Research [N00014-16-1-2982]
- AFRL/Air Force Office of Scientific Research Center of Excellence Grant [FA9550-12-1-0445]
- U.S. Department of Energy, Office of Basic Energy Sciences, Division of Materials Sciences and Engineering [DE-SC0008637]
The advancement of materials science at the mesoscale requires improvements in both sampling volumes/areas and spatial resolution in order to make statistically significant measurements of microstructures that influence higher-order material properties, such as fatigue and fracture. Therefore, SEM-based techniques have become desirable due to improvements in imaging resolution, large sample handling capability, and flexibility for in-situ instrumentation. By using fast sampling of SEM electron detector signals, intrinsic beam scanning defects have been identified that are related to the response time of the SEM electron beam deflectors and electron detectors. Mitigation of these beam scanning defects using detector sampling approaches and an adaptive model for settling time is shown to produce higher resolution SEM images, at faster image acquisition times, with a means to quantify the different response functions for various beam deflectors and detectors including those for electrons and ions.
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