期刊
ULTRAMICROSCOPY
卷 111, 期 8, 页码 1101-1110出版社
ELSEVIER SCIENCE BV
DOI: 10.1016/j.ultramic.2011.03.002
关键词
Annular dark field; Scanning transmission electron microscope; ADF; STEM; Dopant; Imaging; High resolution; Si; Ge; Simulations; Multislice
类别
资金
- MRSEC of the National Science Foundation [DMR-0819885]
- Abu Dhabi-Minnesota Institute for Research Excellence (ADMIRE)
- Petroleum Institute of Abu Dhabi
- Department of Chemical Engineering and Materials Science of the University of Minnesota
Annular dark field scanning transmission electron microscope (ADF-STEM) images allow detection of individual dopant atoms located on the surface of or inside a crystal. Contrast between intensities of an atomic column containing a dopant atom and a pure atomic column in ADF-STEM image depends strongly on specimen parameters and microscope conditions. Analysis of multislice-based simulations of ADF-STEM images of crystals doped with one substitutional dopant atom for a wide range of crystal thicknesses, types and locations of dopant atom inside the crystal, and crystals with different atoms reveal some interesting trends and non-intuitive behaviours in visibility of the dopant atom. The results provide practical guidelines to determine the optimal microscope and specimen conditions to detect a dopant atom in experiment, obtain information about the 3-d location of a dopant atom, and recognize cases where detecting a single dopant atom is not possible. (C) 2011 Elsevier B.V. All rights reserved.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据