4.4 Article

Limits in detecting an individual dopant atom embedded in a crystal

期刊

ULTRAMICROSCOPY
卷 111, 期 8, 页码 1101-1110

出版社

ELSEVIER SCIENCE BV
DOI: 10.1016/j.ultramic.2011.03.002

关键词

Annular dark field; Scanning transmission electron microscope; ADF; STEM; Dopant; Imaging; High resolution; Si; Ge; Simulations; Multislice

资金

  1. MRSEC of the National Science Foundation [DMR-0819885]
  2. Abu Dhabi-Minnesota Institute for Research Excellence (ADMIRE)
  3. Petroleum Institute of Abu Dhabi
  4. Department of Chemical Engineering and Materials Science of the University of Minnesota

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Annular dark field scanning transmission electron microscope (ADF-STEM) images allow detection of individual dopant atoms located on the surface of or inside a crystal. Contrast between intensities of an atomic column containing a dopant atom and a pure atomic column in ADF-STEM image depends strongly on specimen parameters and microscope conditions. Analysis of multislice-based simulations of ADF-STEM images of crystals doped with one substitutional dopant atom for a wide range of crystal thicknesses, types and locations of dopant atom inside the crystal, and crystals with different atoms reveal some interesting trends and non-intuitive behaviours in visibility of the dopant atom. The results provide practical guidelines to determine the optimal microscope and specimen conditions to detect a dopant atom in experiment, obtain information about the 3-d location of a dopant atom, and recognize cases where detecting a single dopant atom is not possible. (C) 2011 Elsevier B.V. All rights reserved.

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