4.4 Article Proceedings Paper

Some aspects of the field evaporation behaviour of GaSb

期刊

ULTRAMICROSCOPY
卷 111, 期 6, 页码 487-492

出版社

ELSEVIER SCIENCE BV
DOI: 10.1016/j.ultramic.2010.11.019

关键词

Atom probe tomography; Compound semiconductors; Field evaporation; Gallium antimonide

资金

  1. UK Engineering and Physical Sciences Research Council (EPSRC) [EP/077664/1]
  2. European Commission [237059]
  3. EPSRC Analytical Chemistry Trust
  4. German National Academic Foundation
  5. Hamburger Stiftung fur Internationale Forschungs- und Studienvorhaben
  6. German National Exchange Service (DAAD)

向作者/读者索取更多资源

In-depth analysis of pulsed laser atom probe tomography (APT) data on the field evaporation of the III-V semiconductor material GaSb reveals strong variations in charge states, relative abundances of different cluster ions, multiplicity of detector events and spatial correlation of evaporation events, as a function of the effective electric field at the specimen surface. These variations are discussed in comparison with the behaviour of two different metallic specimen materials, an Al-6XXX series alloy and pure W. studied under closely related experimental conditions in the same atom probe instrument. It is proposed that the complex behaviour of GaSb originates from a combination of spatially correlated evaporation events and the subsequent field induced dissociation of cluster ions, the latter contributing to inaccuracies in the overall atom probe composition determination for this material. (C) 2010 Elsevier B.V. All rights reserved.

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