The origin of hole injection improvements with MoO3/Al bilayer electrodes in pentacene thin-film transistors

标题
The origin of hole injection improvements with MoO3/Al bilayer electrodes in pentacene thin-film transistors
作者
关键词
-
出版物
SYNTHETIC METALS
Volume 159, Issue 23-24, Pages 2502-2505
出版商
Elsevier BV
发表日期
2009-09-14
DOI
10.1016/j.synthmet.2009.08.041

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