4.5 Article

Complementary circuits based on solution processed low-voltage organic field-effect transistors

期刊

SYNTHETIC METALS
卷 159, 期 21-22, 页码 2368-2370

出版社

ELSEVIER SCIENCE SA
DOI: 10.1016/j.synthmet.2009.08.019

关键词

OFET; Organic field-effect transistor; Low-voltage; Fullerene; P3HT; Self-assembled monolayer dielectric; Phosphonic acid; Organic complementary logic; Inverter

资金

  1. Engineering and Physical Sciences Research Council (EPSRC)
  2. Research Councils UK (RCUK)
  3. Engineering and Physical Sciences Research Council [EP/E06454X/1, EP/C539524/1] Funding Source: researchfish
  4. EPSRC [EP/C539524/1, EP/E06454X/1] Funding Source: UKRI

向作者/读者索取更多资源

The field of organic electronics is advancing quickly towards ultra low-cost, low-end applications and is expected to provide the necessary technology required for flexible/printed electronics. Here we address the need for solution processed low-voltage complementary logic in order to reduce power consumption of organic circuits and hence enable their use in portable, i.e. battery-powered applications. We demonstrate both p- and n-channel solution processed high performance organic field-effect transistors that operate at voltages below vertical bar 1.5 vertical bar V. The reduction in operating voltage is achieved by implementing ultrathin gate dielectrics based on solution processed self-assembled monolayers. This work demonstrates the feasibility of fabricating low-voltage complementary organic circuits by means of solution processing. (C) 2009 Elsevier B.V. All rights reserved.

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