期刊
SURFACE SCIENCE
卷 611, 期 -, 页码 49-53出版社
ELSEVIER SCIENCE BV
DOI: 10.1016/j.susc.2013.01.013
关键词
Bi; Ag(111); Surfactant growth; STM; STS
资金
- Japanese Ministry of Education, Culture, Sports, Science and Technology
- Grants-in-Aid for Scientific Research [25600095, 22360019] Funding Source: KAKEN
We investigated the initial stage of Ag growth on Bi/Ag(111)root 3 x root 3 substrates at room temperature. The nucleation of small one-monolayer-high islands on the substrates was observed by scanning tunneling microscopy (STM). The islands extended laterally and coalesced to form a continuous layer with further deposition. The growth proceeded in a layer-by-layer mode via the repeated nucleation and coalescence of monolayer islands. The top surfaces were always covered by a root 3 x root 3 reconstruction during this growth. dI/dV images and scanning tunneling spectra (STS) revealed that the electronic structure of the grown surfaces was identical to that of the Bi/Ag(111)root 3 x root 3 substrate surfaces. The surfactant action of the Bi atoms reasonably explains the layer-by-layer growth of Ag films with a root 3 x root 3 surface reconstruction. (C) 2013 Elsevier B.V. All rights reserved.
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