Effect of ITO electrode with different oxygen contents on the electrical characteristics of HfO x RRAM devices

标题
Effect of ITO electrode with different oxygen contents on the electrical characteristics of HfO x RRAM devices
作者
关键词
-
出版物
SURFACE & COATINGS TECHNOLOGY
Volume 231, Issue -, Pages 563-566
出版商
Elsevier BV
发表日期
2012-07-21
DOI
10.1016/j.surfcoat.2012.07.039

向作者/读者发起求助以获取更多资源

Find Funding. Review Successful Grants.

Explore over 25,000 new funding opportunities and over 6,000,000 successful grants.

Explore

Discover Peeref hubs

Discuss science. Find collaborators. Network.

Join a conversation