4.7 Article Proceedings Paper

Deposition of silicon oxide films by non-equilibrium, atmospheric-pressure plasma jet

期刊

SURFACE & COATINGS TECHNOLOGY
卷 228, 期 -, 页码 S416-S418

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ELSEVIER SCIENCE SA
DOI: 10.1016/j.surfcoat.2012.05.055

关键词

Atmospheric pressure; Silicon oxide; Porosity

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In this paper, a non-equilibrium atmospheric pressure plasma jet supplied by impulsing power source was developed to deposit silicon dioxide film. Numerical simulation of the nozzle flow fields with jet free expanding and jet impinging substrate was performed by FLUENT software to determine scanning path of plasma jet. The influences of deposition time on surface morphology, chemical configuration and hardness of the deposited films were investigated. The results showed that with the increase of deposition time, protrusions on the film surface were enlarged, while the content of Si-OH increased and the film hardness decreased. Thus the porosity and component of the deposited film could be controlled to meet different applicable requirements through adjusting the deposition time. (C) 2012 Elsevier B.V. All rights reserved.

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