4.7 Article

High-speed epitaxial growth of (100)-oriented CeO2 film on r-cut sapphire by laser chemical vapor deposition

期刊

SURFACE & COATINGS TECHNOLOGY
卷 205, 期 16, 页码 4079-4082

出版社

ELSEVIER SCIENCE SA
DOI: 10.1016/j.surfcoat.2011.02.062

关键词

Laser chemical vapor deposition; CeO2; High deposition rate; r-cut sapphire

资金

  1. International Superconductivity Technology Center (ISTEC)
  2. New Energy and Industrial Technology Development Organization (NEDO)
  3. Materials Integration, Tohoku University
  4. Japan Society for the Promotion of Science [22760550]
  5. Ministry of Education, Science, Sports and Technology [22246082]
  6. Grants-in-Aid for Scientific Research [22246082, 22760550] Funding Source: KAKEN

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(100)-oriented CeO2 film was prepared on r-cut sapphire ((1 $(1) over bar $ 02)Al2O3) by laser chemical vapor deposition at laser powers from 123 to 182W with deposition temperatures ranging from 1042 to 1122 K. The (100) CeO2 films grew epitaxially on (1 $(1) over bar $ 02)Al2O3 substrate with the in-plane orientation relationship of CeO2 [010]//Al2O3 [(1) over bar 101] and CeO2 [001]//Al2O3 [11 $(2) over bar $0]. The surface morphology of the CeO2 films was characterized by elongated grains with truncated pyramidal cap. The deposition rate of the CeO2 film was 10-15 mu m h(-1), about 10-15 times higher than those of conventional metalorganic CVD. (C) 2011 Elsevier B.V. All rights reserved.

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