期刊
SURFACE & COATINGS TECHNOLOGY
卷 205, 期 21-22, 页码 5130-5134出版社
ELSEVIER SCIENCE SA
DOI: 10.1016/j.surfcoat.2011.05.021
关键词
AZO; Thin films; Electron beam irradiation effects; Luminescence; Photoelectron spectroscopies
资金
- Ministry of Knowledge Economy (MKE), Korea under the Information Technology Research Center (ITRC) [NIPA-2011-C1090-1121-0001]
In this study we explored the electrical, optical, and structural properties of Al-doped ZnO (AZO) films prepared with radio frequency magnetron sputtering using argon plasma condition after they were treated by high-energy electron beam irradiation (HEEBI) in air at room temperature. Hall and photoluminescence (PL) measurements revealed that the n-type conductivity was preserved in HEEBI treated films. Hall results also indicated that the AZO films treated by HEEBI with a high fluence of 10(16) electrons/cm(2) have around three times higher mobility, seven times lower electron concentration, and three times higher resistivity than those of the untreated films. PL and X-ray photoelectron spectroscopy showed that the acceptor-like defects, such as zinc vacancies and oxygen interstitials, increased in the HEEBI-treated films with a high fluence, resulting in the decrease in electron concentration of the films. It was found from scanning electron microscope analysis that a larger grain size was observed in HEEBI treated AZO films with a higher fluence, which is related to rougher surface morphologies in HEEBI treated films with a higher fluence, as confirmed by atomic force microscope. We believe that our results will contribute to develop high quality AZO based materials and devices for space application. (C) 2011 Elsevier B.V. All rights reserved.
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