Bendable thin-film transistors based on sol–gel derived amorphous Ga-doped In2O3 semiconductors

标题
Bendable thin-film transistors based on sol–gel derived amorphous Ga-doped In2O3 semiconductors
作者
关键词
-
出版物
SUPERLATTICES AND MICROSTRUCTURES
Volume 59, Issue -, Pages 21-28
出版商
Elsevier BV
发表日期
2013-04-18
DOI
10.1016/j.spmi.2013.03.026

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