期刊
SUPERLATTICES AND MICROSTRUCTURES
卷 45, 期 1, 页码 1-7出版社
ACADEMIC PRESS LTD- ELSEVIER SCIENCE LTD
DOI: 10.1016/j.spmi.2008.10.033
关键词
Molecular dynamics simulation; Dislocation velocity; Vacancy defects; Threading dislocations; Silicon
资金
- National Natural Science Foundation of China [10772062]
The interactions between the 60 degrees shuffle dislocation and two different types of vacancy defects in silicon are separately studied via the molecular dynamics simulation method. The Stillinger-Weber potential is used to describe the atomic interactions. The results show that the dislocation slip velocity will decrease due to the interaction with the vacancy cluster (V-6). The simulation also reveals that the divacancy will be absorbed by the dislocation. Meanwhile, a climbing of the dislocation occurs during their interactions. However, the divacancy has little effect on the dislocation slip velocity. Based on the above results, the decrease in threading dislocation density in SiGe/Si heterostructures with the use of low-temperature Si buffer layer may be explained. (C) 2008 Elsevier Ltd. All rights reserved.
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