The role of stacking faults in the critical current density of MOD films through a thickness dependence study

A study is presented on the evolution through thickness of the angular and magnetic field ( H) dependence of the critical current density (J(c)) for YBa(2)Cu(3)O(7) films grown by the trifluoroacetate route. A clear relation between Jc at self-field (sf) and the thickness-dependent distribution of pinning centers parallel to the ab-planes is found and confirmed by microstructural analysis. Results indicate that stacking faults and their associated partial dislocations are relevant pinning centers for determining the thickness dependence of J(c)(H parallel to ab) and J(c)(sf), respectively, supporting the hypothesis that the thickness dependence of J(c) is related to defect density.