Material engineering of GexTe100−x compounds to improve phase-change memory performances

标题
Material engineering of GexTe100−x compounds to improve phase-change memory performances
作者
关键词
-
出版物
SOLID-STATE ELECTRONICS
Volume 89, Issue -, Pages 93-100
出版商
Elsevier BV
发表日期
2013-08-16
DOI
10.1016/j.sse.2013.07.005

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