期刊
SOLID-STATE ELECTRONICS
卷 88, 期 -, 页码 2-8出版社
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.sse.2013.04.020
关键词
MOSFET; Mobility; Strain; SiGe; Ge; III-V Semiconductors
资金
- Ministry of Education, Culture, Sports, Science and Technology [18063005, 23246058]
- Innovation Research Project on Nano electronics Materials and Structures and Research and Development Program for Innovative Energy Efficiency Technology from New Energy and Industrial Technology Development Organization
- Grants-in-Aid for Scientific Research [23246058, 12J07612] Funding Source: KAKEN
MOSFETs using channel materials with high mobility and low effective mass have been regarded as strongly important for obtaining high current drive and low supply voltage CMOS under sub 10 nm regime. From this viewpoint, attentions have recently been paid to Ge and III-V channels. In this paper, possible solutions for realizing III-V/Ge MOSFETs on the Si platform are presented. The high quality III-V channel formation on Si substrates can be realized through direct wafer bonding. The gate stack formation is constructed on a basis of atomic layer deposition (ALD) Al2O3 gate insulators for both InGaAs and Ge MOSFETs. As the source/drain (S/D) formation, Ni-based metal S/D is implemented for both InGaAs and Ge MOSFETs. By combining these technologies, we demonstrate successful integration of InGaAs-OI nMOSFETs and Ge p-MOSFETs on a same wafer and their superior device performance. (c) 2013 Elsevier Ltd. All rights reserved.
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