期刊
SOLID-STATE ELECTRONICS
卷 64, 期 1, 页码 42-46出版社
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.sse.2011.07.003
关键词
Stacked-nanowires; Virtual source/drain; 3D NAND flash memory
资金
- MKE/KEIT [10035320]
- Korea Evaluation Institute of Industrial Technology (KEIT) [10035320] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
- Korea Institute of Industrial Technology(KITECH) [B0000058] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
A new stacked-nanowire device is proposed for 3-dimensional (3D) NAND flash memory application. Two single-crystalline Si nanowires are stacked in vertical direction using epitaxially grown SiGe/Si/SiGe/Si/SiGe layers on a Si substrate. Damascene gate process is adopted to make the gate-all-around (GM) cell structure. Next to the gate, side-gate is made and device characteristics are controlled by the side-gate operations. By forming the virtual source/drain using the fringing field from the side-gate, short channel effect is effectively suppressed. Array design is also investigated for 3D NAND flash memory application. (C) 2011 Elsevier Ltd. All rights reserved.
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