Device characteristics of amorphous indium gallium zinc oxide thin film transistors with ammonia incorporation

标题
Device characteristics of amorphous indium gallium zinc oxide thin film transistors with ammonia incorporation
作者
关键词
-
出版物
SOLID-STATE ELECTRONICS
Volume 61, Issue 1, Pages 96-99
出版商
Elsevier BV
发表日期
2011-02-09
DOI
10.1016/j.sse.2011.01.001

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