Electrical properties of metal–ferroelectric–insulator–semiconductor structure using BaxSr1−xTiO3 for ferroelectric–gate field effect transistor

出版年份 2011 全文链接

标题

作者

关键词

出版物

Volume 62, Issue 1, Pages 25-30

出版商

Elsevier BV

发表日期

2011-04-22

DOI

10.1016/j.sse.2011.03.004

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